IRF730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRF730PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.308K
IRF730
Intematiqhal
TOR Rectifier
HEXFETO Power MOSFET
. Dynamic dv/dt Ratin ..
IRF730S ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.1009
International
Rectifier IRF73OS
HEXFETO Power MOSFET
Surface Mount
Available ..
IRF730STRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF730STRR ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF7311 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91435CIRF7311®HEXFET Power MOSFETl Generation V Technology18l Ultra Low On-ResistanceS1 D1V = ..
ISD2532S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2540S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2560G , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560GI , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations
IRF730B
400V N-Channel MOSFET
IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF730B IRFS730B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 5.5 5.5 * A D C - Continuous (T = 100°C) 3.5 3.5 * A C I (Note 1) Drain Current - Pulsed 22 22 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) 5.5 A AR E (Note 1) Repetitive Avalanche Energy 7.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 73 38 W D C - Derate above 25°C 0.58 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter IRF730B IRFS730B Units R Thermal Resistance, Junction-to-Case Max. 1.71 3.31 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
