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IRF7322D1TRPBFIRN/a58avai-20V FETKY
IRF7322D1TRPBFIORN/a35000avai-20V FETKY


IRF7322D1TRPBF ,-20V FETKYapplications.The SO-8 has been modified through a customized leadframe forenhanced thermal characte ..
IRF7322D1TRPBF ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7324 ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -93799AIRF7324®HEXFET Power MOSFET● Trench Technology● Ultra Low On-Resistance 1 8S1 D1V = -20 ..
IRF7324D1 ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7324D1 TR ,-20V FETKYapplications.The SO-8 has been modified through a customized leadframe for enhancedthermal characte ..
IRF7324D1TR ,-20V FETKYapplications. Generation 5 HEXFETs utilize advanced processing techniquesto achieve extremely low ..
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IRF7322D1TRPBF
-20V FETKY
PD - 95298
International
TOR Rectifier IRF7322D1 PbF
FETKW"MOSFET / Schottky Diode
Co-packaged HEXFET® Power MOSFET
and Schottky Diode A ‘J A EEK VDSS = -20V
Ideal For Buck Regulator Applications A m
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free
RDS(on) = 0.0589
s [LIL]"- SEE
5311i:
Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -5.3 A
In @ TA = 70°C -4.3
IDM Pulsed Drain Current (D -43
Pro @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
Vss Gate-to-Source Voltage t 12 V
dv/dt Peak Diode Recovery dv/dt C2) -5.0 V/ns
Tu TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
Ras I Junction-to-Ambient (ii) 62.5 °C/W
Notes:
T, Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
® ISD I -2.9A, di/dt S -77A/ps, VDD I V(BR)DSSI Tu S 150°C
C:3) Pulse width S 300ps; duty cycle S 2%
(CT) Surface mounted on FR-4 board, ts 10sec.
WWW. i rf.com 1
10/12/04

llRF7322D1PbF
International
TOR Rectifier
MOSFET Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vss = 0V, ID = -250pA
RDS(on) Static Drain-to-Source On-Resistance - 0.049 0.062 g VGs = -4.5V, ID = -2.9A ©
- 0.082 0.098 VGS = -2.7V, ID = -1.5A ©
Vesuh) Gate Threshold Voltage -O.70 - - V I/ce = VGs, ID = -250pA
gfs Forward Transconductance - 5.9 - S VDs = -10V, ID = -1.5A
loss Drain-to-Source Leakage Current - - -1.0 A Vos = -16V, VGS = 0V
- - -25 p Vos = -16V, Vss = OV, Tu = 55°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = -12.0V
Gate-to-Source Reverse Leakage - - -1OO Vss = 12.0V
% Total Gate Charge - 19 29 ID = -2.9A
Qgs Gate-to-Source Charge - 4.0 6.1 nC VDS = -16V
di Gate-to-Drain ("Miller") Charge - 7.7 12 Vas = -4.5V (see figure 6) ©
td(on) Turn-On Delay Time - 15 22 VDD = -10V
tr Rise Time - 40 60 ns ID = -2.9A
td(off) Turn-Off Delay Time - 42 63 Rs = 6.09
tf Fall Time - 49 73 RD = 3.4Q ©
Ciss Input Capacitance - 780 - l/ss = 0V
Coss Output Capacitance - 470 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current (Body Diode - - -2.5 A
ISM Pulsed Source Current (Body Diode) - - -21
Vso Body Diode Forward Voltage - - -1.2 V TJ = 25°C, IS = -2.9A, I/ss = 0V
trr Reverse Recovery Time (Body Diode) - 47 71 ns TJ = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge - 49 73 I di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
Irz(av) Max. Average Forward Current 2.7 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
2 See Fig. 14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 I; = 1.0A, T, = 25''C
0.62 IF = 2.0A, T, = 25°C
0.39 V IF = 1.0A, T, = 125°C
0.57 I; = 2.0A, T, = 125°C.
IRM Max. Reverse Leakage current 0.02 m A VR = 20V T J = 25°C
8 TJ = 125°C
Ct Max. Junction Capacitance 92 pF VH = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
2

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