IRF7324TRPBF ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8Absolute Maximum RatingsParameter Max. UnitsV Drain-Source Voltage -20 VDSI @ T = ..
IRF7324TRPBF ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package IRF7324PbF®HEXFET Power MOSFET● Trench Technology● Ultra Low On-Resistance 1 8S1 D1V = ..
IRF7325 ,-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7325TRPBF ,12V Dual P Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7326D2 ,-30V FETKYapplications.The SO-8 has been modified through a customized leadframe forenhanced thermal characte ..
IRF7326D2TR ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
ISD4003-06MEI , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4003-06MS , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4004-08ME , Single-Chip Voice Record/Playback Devices 8-, 10-, 12-, and 16-Minute Durations
ISD4004-08MP , Single-Chip Voice Record/Playback Devices 8-, 10-, 12-, and 16-Minute Durations
ISD4004-08MS , Single-Chip Voice Record/Playback Devices 8-, 10-, 12-, and 16-Minute Durations
ISD4004-08MX , Single-Chip Voice Record/Playback Devices 8-, 10-, 12-, and 16-Minute Durations
IRF7324TRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95460
International
TOR Rectifier llRF7324PbF
HEXFET6 Power MOSFET
o Trench Technology
q Ultra Low On-Resistance 81m} am] D1
. Dual P-Channel MOSFET 2 l , VDss = -20V
. G1 CED D1
q Low Profile (<1.1mm)
q Available in Tape & Reel S2 :mL l 6cm D2
q 2.5V Rated G2 4 SEED D2 RDS(0n) = 0.0189
q Lead-Free
. . Top View
Description
Newtrench HEXFET6 Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -9.0
In @ TA = 70°C Continuous Drain Current, Vas @ -4.5V -7.1 A
IDM Pulsed Drain Currenk0 -71
PD @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 16 mW/°C
Vas Gate-to-Source Voltage 1 12 V
TJ , Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient (3 62.5 °C/W
1
6/29/04
IRF7324PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.02 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - O.018 Q VGS = -4.5V, ID = -9.OA ©
- - 0.026 l/ss = -2.5V, ID = -7.7A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 19 - - S Vos = -10V, ID = -9.0A
loss Drain-to-Source Leakage Current - - -1.0 pA l/rss = -16V, Vss = 0V
- - -25 V93 = -16V, l/ss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 42 63 ID = -9.0A
QgS Gate-to-Source Charge - 7.1 11 nC I/cs = -16V
di Gate-to-Drain ("Miller") Charge - 12 18 l/ss = -5.0V
tdmn) Turn-On Delay Time - 17 - VDD = -10V
t, Rise Time - 36 - ns ID = -1.0A
1d(off) Turn-Off Delay Time - 170 - Rs = 6.0Q
tf Fall Time - 190 - RD = 109 C)
Ciss Input Capacitance - 2940 - Vas = 0V
Coss Output Capacitance - 630 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 420 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -71 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 180 270 ns Tu = 25°C, IF = -2.0A
Q,, Reverse Recovery Charge - 300 450 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
© Surface mounted on FR-4 board, ts 10sec.
2
