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IRF7338TRPBFIRN/a64351avai12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package


IRF7338TRPBF ,12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 95197IRF7338PbF®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch18S1 D1 ..
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IRF7338TRPBF
12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
PD - 95197
TOR Rectifier RF7338PbF
HEXFET6 Power MOSFET
q Ultra Low On-Resistance N-CHANNELMOSFET - -
q Dual N and P Channel MOSFET s1mr1- 833391 N Ch P Ch
o Surface Mount GI :112 l 7:13 D1 V 12V 12V
q Available In Tape & Reel S2 BIL SE D2 DSS -
o Lead-Free l
G2 CITE" I-nr D2
P-CHANNELWN9FET RDS(°n)O.O34§2 0.150Q
Top View
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power SO-8
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
VDS Drain-to-Source Voltage 12 -12
ID @ TA = 25°C Continuous Drain Current, Vas @ 4.5V 6.3 -3.0 A
ID @ TA = 70°C Continuous Drain Current, Vas @ 4.5V 5.2 -2.5
IDM Pulsed Drain Current (D 26 -13
Pro @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
Vas Gate-to-Source Voltage :12 © t 8.0 V
TJ, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 62.5 °CNV
1
9/30/04

IRF7338PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. _ _ N-Ch 12 - - VGs = ov, ID = 250pA
V(BR)DSS Drain to Source Breakdown Voltage P-Ch -12 - - v VGS = 0V, ID = -250pA
_ . N-Ch - 0.01 - a Reference to 25°C, ID = 1mA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient P-Ch = 4y.j1 = V/ C Reference to 25°C, '0 = -1mA
N-Ch - - 0.034 Vas = 4.5V, ID = 6.0A ©
. . . - - 0.060 Vas = 3.0V, lo = 2.0A ©
R t t D -t - -R t
DS(ON) S a IC ram C) Source On esus ance P-Ch - - 0.150 Q VGS = -4.5V, ID = -2.9A ©
- - 0.200 Vss = -2.7v, ID = -1.5A ©
N-Ch 0.6 - 1.5 Ihos = VGS, ID = 250uA
Vssith) Gate Threshold Voltage P-Ch -O.4O - -1 .0 v VDS = Vas, lo = -250PA
N-Ch 9.2 - - V = 6.0V, I = 6.0A ©
gfs Forward Transconductance P-Ch 3.5 - - s v: = -6.0V, 'l, = -1.5A ©
N-Ch - - 20 Vos = 9.6V, Vss = 0V
. - _ P-Ch - - -1.0 Vos = -9.6 V, VGS = 0V
loss Drain to Source Leakage Current N-Ch - - 50 pA Vros = 9.6V. Ves = 0V, Tu = 55°C
P-Ch - - -25 Vros = -9.6V, l/ss = 0V, Tu = 55°C
less Gate-to-Source Forward Leakage N-Ch - - 1100 nA VGS = 1 12V
P-Ch - - 1100 Vas = 1 8.0V
% Total Gate Charge :2: I I :3 N-Channel
N-Ch - - 1'9 nC lo = 6.0A, Vos = 6.0V, Ves = 4.5V
Qgs Gate-to-Source Charge .
P-Ch - - 1.3
. . N-Ch - - 3 9 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - - 16 ID = 4.9A, Vrss = -9.6V, Vos = -4.5 V
two”) Turn-On Delay Time 32: I fd I N-Channel
. . N-Ch - 7:6 - vDD = 6.0V, ID =1.0A, Rs = 6.on,
t, Rise Time P-Ch - 13 - ns Vos = 4.5V
. N-Ch - 26 - ©
taott) Turn-Off Delay Time P-Ch - 27 - P-Channel
. N-Ch - 34 - VDD = -6.0V, ID = -2.9A, R6 = 6.09,
if Fall Time P-Ch - 25 - Vas = M.5)/
Ciss Input Capacitance lg, - :33 - N-Channel
N'Ch - 340 - pF VGS = OV, Ihos = 9.0V, f =1.0MHz
Coss Output Capacitance - - -
P-Ch - 80 -
N-Ch - 110 - P-Channel
Crss Reverse Transfer Capacitance P-Ch - 58 - Ves = 0V, VDS = -9.0V, f = 1.0KHz
Source-Drain Ratings and Characteristics
Parameter Min Typ Max. Units Conditions
. . N-Ch - - 6.3
Is Continuous Source Current (Body Diode) P-Ch - - -3.0 A
N-Ch - - 26
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -13
N-Ch - - 1.3 V TJ = 25°C, ls =1.7A,VGS = ov ©
Vso Diode Forward Voltage P-Ch - - -1.2 TJ = 25°C, ls = -2.9A, l/ss = OV ©
N-Ch - 51 76 ns N-Channel
trr Reverse Recovery Time P-Ch - 37 56 T J = 25°C, IF = 1.7A, di/dt = 100A/ps
N-Ch - 43 64 nC P-Channel ©
Qrr Reverse Recovery Charge P-Ch - 20 30 Tu = 25°C, IF = -2.9A, di/dt = -100A/ps
Notes:
0) Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width 3 400ps; duty cycle s: 2%.

© Surface mounted on 1 in square Cu board.
© The N-channel MOSFET can withstand 15V Vas max
for up to 24 hours over the life of the device.

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