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IRF7341QPBFIRN/a3000avai55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7341QPBF
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 96108A
IIRF7341QPbF
HEXFET® Power MOSFET
Benefits
. Advanced Process Technology Voss RDS(on) max ID
. Dual N-Channel MOSFET 55V 0.050@VGS = 10V 5.1A
. Ultra Low On-Resistance
. 175°C Operating Temperature 0.065@Vss = 4.5V 4.42A
. Repetitive Avalanche Allowed up to Tjmax
. Lead-Free
Description
These HEXFET© Power MOSFET's in a Dual SO-8 package
utilize the lastestprocessingtechniquesto achieve extremely SI [nr/- 8331 D1
low on-resistance per silicon area. Additional features of 2 7
these HEXFET Power MOSFET's are a 175°C junction G1 IIL D1
ratinatemperature,fastswitchin nimrv
gseztivg J'/J12'2l'r/liirTC'lrtli2', begesfg:::r:b:19 'ttrt/g,', S2 DEL 63]] D2
this design an extremely efficient and reliable device for use G2 4 5-ITE D2
in a wide variety of applications.
The 175°C rating for the 50-8 package provides improved Top View SO-8
thermal performance with increased safe operating area and
dual MOSFETdie capability make itideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-Source Voltage 55 V
In @ TA = 25°C Continuous Drain Current, Vas @ 10V 5.1
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 4.2 A
IDM Pulsed Drain Current© 42
Po @TA = 25°C Maximum Power Dissipation© 2.4 W
PD @TA = 70°C Maximum Power Dissipation© 1.7 W
Linear Derating Factor 16 mW/°C
Ves Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 140 mJ
IAR Avalanche Current© 5.1 A
EAR Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ
T J , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient © 62.5 °CNV
1
08/03/10

IRF7341QPbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 -- -- V VGs = 0V, ID = 250uA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 0.043 O.050 Q VGS = lov, ID = 5.1A ©
- 0.056 0.065 Ves = 4.5V, ID = 4.42A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGS, ID = 250pA
gfs Forward Transconductance 10.4 - - S Vos = 10V, ID = 5.2A
loss Drain-to-Source Leakage Current - - 2.0 pA l/rss = 44V, Vss = 0V
- - 25 V93 = 44V, Vss = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Qg Total Gate Charge - 29 44 ID = 5.2A
QgS Gate-to-Source Charge - 2.9 4.4 nC I/cs = 44V
di Gate-to-Drain ("Miller") Charge - 7.3 11 l/ss = 10V
td(0n) Turn-On Delay Time - 9.2 - VDD = 28V
t, Rise Time - 7.7 - ns ID =1.0A
1d(off) Turn-Off Delay Time - 31 - Rs = 6.on
if Fall Time - 12.5 - Vas = 10V ©
Ciss Input Capacitance - 780 - Vas = 0V
Coss Output Capacitance - 190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 66 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.4 A showing the
ISM Pulsed Source Current 42 integral reverse G
(Body Diode) co - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, Is = 2.6A, Veg = 0V ©
trr Reverse Recovery Time - 51 77 ns To = 25°C, IF = 2.6A
Qrr Reverse Recovery Charge - 76 114 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts: 10sec.
max. junction temperature.
© Pulse width f 300us; duty cycle 3 2%.
2

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