IRF7342QTRPBF ,-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications. This dual, surfacemount SO-8 can dramatically reduce board space and is alsoSO-8avail ..
IRF7342QTRPBF ,-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package ®
IRF7342QPBF-IRF7342QTRPBF
-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International
ISBR Rectifier
|RF7342QPbF
HEXFET® Power MOSFET
. Advanced Process Technology
o Ultra Low On-Resistance
q Dual P Channel MOSFET S1 [nr'- am: D1
q Surface M.ou_nt G1 E2 7E: D1 VDSS = -55V
q Available In Tape & Reel -
q 150°C Operating Temperature S2 BIL 5D: D2
o Lead-Free 4 s
G2 DI DI D2 RDs(on) = 0.1059
Description Top View
These HEXFETO Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniquesto achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFETs are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is also SO-8
available in Tape & Reel.
Base Part Number Package Type Standard Pack . Orderable Part Number EOL Notice
Farm t2uantity
HRMQPDF Stih8 Tube/Bulk 95 1RE73429PBF EOL 529
|Rl-73420PbF 808 Tape and Reel 4000 IRF7342aTPPbF
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -55 V
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V -3.4
ID @ To = 70°C Continuous Drain Current, Vas @ 10V -2.7 A
IDM Pulsed Drain Current (D -27
PD @Tc = 25°C Power Dissipation 2.0
PD @TC = 70°C Power Dissipation 1.3 W
Linear Derating Factor 0.016 W/°C
Vas Gate-to-Source Voltage i 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 114
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient® - 62.5 °C/W
© 2014 International Rectifier Submit Datasheet Feedback August 22, 2014
|RF734'2QPbF
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 -- - V Vss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.054 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-SourceOn-Resistance - O.095 0.105 Q l/ss = -10V, ID = -3.4A ©
- 0.150 0.170 VGS = -4.5V, ID = -2.7A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = I/ss, ID = -250pA
gfs Forward Transconductance 3.3 - - S Vos = -10V, ID = -3.1A
loss Drain-to-Source LeakageCurrent : : le pA x3: : :21: x2: : g, Tu = 55°C
less Gate-to-Source Forward Leakage - - -100 n A Ves = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
% Total Gate Charge - 26 38 ID = -3.1A
Qgs Gate-to-Source Charge - 3.0 4.5 nC VDs = -44V
di Gate-to-Drain ("Miller") Charge - 8.4 13 Veg = -10V, See Fig. 10 (D
td(on) Turn-On Delay Time - 14 22 I/oo = -28V
tr Rise Time - 10 15 ns ID = -1.0A
td(off) Turn-Off Delay Time - 43 64 Rs = 6.09
tf Fall Time -.-.- 22 32 RD = 169, ©
Ciss Input Capacitance - 690 - l/ss = ov
Coss Output Capacitance - 210 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 86 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous SourceCurrent MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -27 p-n junction diode. s
l/so Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, l/ss = 0V ©
trr Reverse Recovery Time - 54 80 ns Tu = 25°C, IF = -2.0A
Qrr Reverse RecoveryCharge - 85 130 no di/dt = -100A/ps ©
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 20mH
Re = 259, 'As = -3.4A. (See Figure 8)
© Iso S -3.4A, di/dt S -150A/ps, VDD S V(BR)DSS,
T J f 150°C
© Pulse width 3 300us; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t<10 sec
© 2014 International Rectifier
Submit Datasheet Feedback
August 22, 2014
