IRF7380QTRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET Power MOSFET V R max ..
IRF7380TRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters73m
IRF7380QTRPBF
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
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TOR Rectifier |RF7380QPbF
. Advanced Process Technology HEXFETO Power MOSFET
. Ultra Lo On-Res'stance
. (g,'lflrv/dit:r2lz'lsfr'' Voss RDS(on) max lr,
. Surface Mount 80V 73mf2@Vas = 10V 2.2A
. Available in Tape & Reel
. 150°COperatingTemperature
. Lead-Free
Description
Additional features of These HEXFET Power
MOSFET's area 150°C junction operatingtemperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combineto makethis design an
extremely efficient and reliable device for use in awide
S2 313%
31¢ mu D1
GIrnr2- 7111301
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variety of applications. Top View SO-8
The ethcient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
St d d P k
Base part number Orderable part number Package an ar ac EOL Notice Replacement Part Number
Type Form Quantity
IRF7380QPbF IRF7380QTRPbF SO-e Tape and Reel 4000 EOL 529 Please search the EOL 2” number on IR'S
IRF738GaPbF so-e Tube 95 EOL 529 wisbsLtetirguid-nce it for uidanc
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
Vss Gate-to-Source Voltage 1 2O
ID © TA = 25°C Continuous Drain Current, I/ss @ 10V 3.6
ID @ TA = 100°C Continuous Drain Current, l/ss @ 10V 2.9 A
IDM Pulsed Drain Current C) 29
PD @TA = 25°C Maximum Power Dissipation 2.0 W
Linear Derating Factor 0.02 WPC
dv/dt Peak Diode Recovery dv/dt © 2.3 V/ns
TJ Operati ng Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rau. Junction-to-Drain Lead -- 42 °C/W
Ra, Junction-to-Ambient (PCB Mount) (9 - 62.5
Notes (O through © are on page 8
ll © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014
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|RF7380®PbF
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.09 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 61 73 mf2 I/ss = 10V, ID = 2.2A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current -- -- 20 pA Vos = 80V, l/ss = 0V
- - 250 Vos = 64V, I/ss = ov, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage -- -- -200 Vss = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.3 - .-__ S I/rss = 25V, ID = 2.2A
a, Total Gate Charge - 15 23 lo = 2.2A
Qgs Gate-to-Source Charge - 2.9 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge -- 4.5 -- Vss = 10V ©
tum) Turn-On Delay Time - 9.0 - VDD = 40V
tr Rise Time - 10 - ID = 2.2A
td(off) Turn-Ott Delay Time - 41 - ns Rs = 249
t, Fall Time - 17 - Vss = 10V Ci))
Ciss Input Capacitance - 660 - Vas = 0V
Coss Output Capacitance - 110 - I/rs = 25V
Crss Reverse Transfer Capacitance - 15 - pF f = 1.0MHz
Coss Output Capacitance - 710 - Vas = 0V, 1/ros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 72 - Vss = 0V, l/rss = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 140 - Vss = 0V, Vos = 0V to 64V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 75 mJ
IAR Avalanche Current CD _ 2.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - --- 3.6 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 29 A integral reverse (5
(Body Diode) COO p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 2.2A, VGS = 0V C9
trr Reverse Recovery Time - 50 - ns To = 25°C, IF = 2.2A, VDD = 40V
Qrr Reverse Recovery Charge -- 110 -- nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
© 2014 International Rectifier
Submit Datasheet Feedback September 8, 2014
