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IRF740ST,STN/a10000avai10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
IRF740. |IRF740STN/a150avai10A, 400V, 0.550 Ohm, N-Channel Power MOSFET


IRF740. ,10A, 400V, 0.550 Ohm, N-Channel Power MOSFETIRF740®N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220PowerMESH™ MOSFETTYPE V R IDSS DS(on) DIRF740 400 ..
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IRF740-IRF740.
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
IRF740
N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
October 1998
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area (1) ISD ≤10 A, di/dt ≤120 Α/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRF740

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE

(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
IRF740

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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
IRF740

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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRF740

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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 1: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
IRF740

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