IRF740PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
EOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
. Repetitive Aval ..
IRF740S ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF740SPBF , HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=0.55Ω , ID=10A )
IRF740STRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageinternational
TOR Rectifier 1RF740S
HEXFET® Power MOSFET
PD-9.1010
q Surface Mount
q A ..
IRF740STRR ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF741 ,N-Channel Power MOSFETs/ 10A/ 350V/400VElectrical Characteristics (T c= 25''C unless otherwise noted)
r...b.i3
Symbol Charattteristi ..
ISL22317TFRTZ , Precision Single Digitally Controlled Potentiometer (XDCP™)
ISL22424UFR16Z , Dual Digitally Controlled Potentiometer (XDCP™)
ISL23711UIU10Z , Terminal Voltage - 3V or - 5V, 128 Taps IC Serial Interface
ISL24003IRZ , Multi-Channel Buffers Plus VCOM Driver
ISL24006IRZ-T7 , 14-Channel Programmable Switchable I2C TFT-LCD Reference Voltage Generator with Integrated 4-Channel Static Gamma Drivers
ISL28114FHZ-T7A , Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers
IRF740..-IRF740PBF
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
I912 Rectifier
PD-9.375H
|RF740
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Voss = 400V
r3 RDS(on) L"T. 0.559
s ID = 10A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
L“ =13
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10 V 10
lo @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 6.3 A
[W Pulsed Drain Current (i) 40
pr, @ To = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
Vas Gate-to-Source Voltage $20 V
EAs Single Pulse Avalanche Energy © 520 mJ
IAR Avalanche Current (i) 10 A
EAR Repetitive Avalanche Energy C) 13 mJ
dv/dt Peak Diode Recovery dv/dt @ 4.0 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RBJC Junction-to-Case - - 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - __6_2___ -
IR F740
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V Vas=OV, ID: 250PA
AVpnvss/ATu Breakdown Voltage Temp. Coefficient - 0.4.9 - V/°C Reference to 25°C, ID----. 1mA
Rospn) Static Drain-to-Source On-Resistance - - 0.55 Q VGs=10V, 19:6.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Viss=Vss, lo--.. ZSOMA
gfs Forward Transconductance 5.8 - - S Vos=50V, Io=6.0A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=400V, l/ass-OV
- - 250 Vos=320V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas=20V
Gale-to-Source Reverse Leakage - - -100 Vss=40V
ch Total Gate Charge - - 63 ID=10A
Qgs Gate-to-Source Charge - - 9.0 "C Vos=320V
di Gate-to-Drain ("Miller") Charge - - 32 Ves=10V See Fig. 6 and 13 G)
tum) Turn-On Delay Time - 14 - Voo=200V
tr Rise Time - 27 - ns In=10A
tum) Turn-Off Delay Time - 50 - RG=9.1Q
t: Fall Time - 24 - RD=ZOQ See Figure 10
Lo Internal Drain Inductance - 4.5 - 36:11: ite.') O
nH from package iii)
Ls Internal Source Inductance - 7.5 - and center df
die contact s
Ciss Input Capacitance _ - 1400 -- Vss=OV
Cogs Output Capacitance - 330 - pF Vos=25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 10 MOSFET symbol D
(Body Diode) A showing the L,-,' c'
ISM Pulsed Source Current - - 40 integral {everge G (lo-]
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=1OA, VGs=0V CO
trr Reverse Recovery Time - 370 790 ns, TJ=25°C, IF=1OA
Qrr Reverse Recovery Charge - 3.8 8.2 “C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negIegible (turn-on is dominated by Ls+Ln)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=9.1mH
RG:25§2, IAs=10A (See Figure 12)
© Isos1OA, di/dts120A/p1s, VDDSV(BR)DSS,
TJS150°C
© Pulse width f. 300 VS," duty cycle S2%.
