IRF7402 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93851AIRF7402®HEXFET Power MOSFETl Generation V TechnologyAAl Ultra Low On-Resistance 1 8S Dl ..
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IRF7402-IRF7402TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93851A
International
Tart, Rectifier IRF7402
HEXFET*) Power MOSFET
0 Generation V Technology
o Ultra Low On-Resistance s m1 " :13 D
o N-Channel MOSFET 2 7 VDSS = 20V
. Very Small SOIC Package s DI a E D
. Low Profile(<1.1mm) SD13 (tl, 61m
0 Available in Tape & Reel G [nr-' 5:3: D =
. Fast Switching RDS(on) 0.035n
Description op lew
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely eecient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss © 4.5V 6.8
ID @ TA = 70°C Continuous Drain Current, Ves @ 4.5V 5.4 A
IDM Pulsed Drain Current C) 54
PD @TA = 25°C Power Dissipation 2.5 W
Pro @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/''C
VGS Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt C2) 5.0 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient © 50 °C/W
1
2/22/00
IRF7402 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.024 - V/°C Reference to 25°C, ID = 1mA
Rroson) Static Drain-to-Source On-Resistance - 0.035 Q VGS = 4.5V, ID = 4.1A ©
- 0.050 VGS = 2.7V, ID = 3.5A S
VGS(th) Gate Threshold Voltage 0.70 - - V Vros = VGs, ID = 250PA
gfs Forward Transconductance 6.1 - - S VDs = 10V, ID = 1.9A
bss Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, VGS = 0V D
- - 25 Vos = 16V, VGS = 0V, TJ = 125 C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -121/
% Total Gate Charge - 14 22 ID = 3.8A
Qgs Gate-to-Source Charge - 2.0 3.0 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 6.3 9.5 N/ss = 4.5V, See Fig. 6 and 12 ©
tam) Turn-On Delay Time - 5.1 - VDD = 10V
tr Rise Time - 47 - ns ID = 3.8A
tam) Turn-Off Delay Time - 24 - Rs = 6.29
tr Fall Time - 32 - RD = 2.69 ©
Ciss Input Capacitance - 650 - VGS = 0V
Coss Output Capacitance - 300 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) © - - 54 p-n junction diode. s
Va: Diode Forward Voltage - - 1.2 V T: = 25°C, Is = 3.8A, VGS = 0V ©
tn Reverse Recovery Time - 51 77 ns T: = 25°C, IF = 3.8A
Qrr Reverse Recovery Charge - 69 100 nC di/dt = 100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by
. . © Pulse width 3 300ps; duty cycle s: 2%.
max. junction temperature. (See ng. 11)
© 1503 3.8A, di/dt s 96A/ps, VDDS ViBR)DSS, GD When mounted on 1 inch square copper board, t<10 sec
To I 150°C S This data sheet has curves & data from IRF7601
2
