IRF7406TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF740A ,N-CHANNEL POWER MOSFETIRF740A$GYDQFHG 3RZHU 026)(7
IRF740AS ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 4 ..
IRF740AS ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 92005SMPS MOSFETIRF740AS/L®HEXFET Power MOSFET
IRF740ASTRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 4 ..
IRF740ASTRLPBF , Power MOSFET
ISL2100AAR3Z , 100V, 2A Peak, High Frequency Half-Bridge Drivers
ISL21060BFH641Z-TK , Precision, Low Noise FGA Voltage References
ISL2111ABZ , 100V, 3A/4A Peak, High Frequency Half-Bridge Drivers
ISL22317TFRTZ , Precision Single Digitally Controlled Potentiometer (XDCP™)
ISL22424UFR16Z , Dual Digitally Controlled Potentiometer (XDCP™)
ISL23711UIU10Z , Terminal Voltage - 3V or - 5V, 128 Taps IC Serial Interface
IRF7406TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:rartR3ctifier
Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
PD - 95302
IRF7406PbF
HEXFET® Power MOSFET
Top View
VDSS = -30V
RDS(on) = 0.0459
Parameter Max. Units
ID © TA = 25°C 10 Sec. Pulsed Drain Current, Vss @ -10V -6.7
ID @ TA = 25''C Continuous Drain Current, VGs © -10V -5.8 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.7
IDM Pulsed Drain Current Ci) -23
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance Ratings
Parameter Typ. Max. Units
ROJA Maximum Junction-to-Ambient) - 50 'CM/
1
10/7/04
IRF7406PbF
International
TOR iikyctifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Veg = 0V, ID = -250pA
AWBmDss/ATJ Breakdown Voltage Temp. Coefficient - 0.020 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.045 Q VGS = MOV, ID = -2.8A ©
- - 0.070 Ves = -4.5V, ID = -2.4A ©
VGSM Gate Threshold Voltage -1.0 - - V VDs = Vss, ID = -250pA
gfs Forward Transconductance 3.1 - - S l/ns = -15V, ID = -2.8A
. - - -1.0 l/ns = -24V, N/cs = OV
l Drain-to-Source Leaka e Current A
DSS g - - -25 p Vos = -24V, VGs = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - - -100 nA Ves = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Ves = 20V
% Total Gate Charge - - 59 ID = -2.8A
Qgs Gate-to-Source Charge - - 5.7 nC VDs = -2.4V
di Gate-to-Drain ("Miller") Charge - - 21 Vcs = -10V, See Fig. 6 and 12 ©
tam) Turn-On Delay Time - 16 - Von = -15V
tr Rise Time - 33 - ns ID = -2.8A
td
tt FaIITime - 47 - RD = 5.39, See Fig. 10 ©
L Internal Drain Inductance - 2.5 -
D nH Between lead tip (Ir" "
and center of die contact 63L /
LS Internal Source Inductance - 4.0 - -
Ciss Input Capacitance - 1100 - Veg = ov
Cess Output Capacitance - 490 - pF 1/ros = -25V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 1 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current integral reverse a
(Body Diode) CD - - -23 p-n junction diode. s
l/sn Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -2.0A, N/cs = 0V S)
trr Reverse Recovery Time - 42 63 ns Tu = 25°C, IF = -2.8A
Qrr Reverse Recovery Charge - 64 96 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
© ISD S -2.8A, di/dt S 90A/ps, VDD S V(BR)DSS, G) Surface mounted on FR-4 board, t S 10sec.
Tu s: 150°C
