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IRF7420TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95633A
International
TOR Rectifier IRF7420PbF
HEXFET© Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET VDss RDS(on) max ID
Surface Mount M21/ 14mQ@VGs=-4.5V -11.5A
Available in Tape & Reel 17.5mQ@VGs = -2.5V -9.8A
Lead-Free 26mQ@Vss = -1.8V -8.1A
Description
These P-Channel HEXFET6 Power MOSFETs from s m1 - a D
International Rectifier utilize advanced processing CED
techniques to achieve the extremely Iowon-resistance s [CIE] 2 _ 7 D
per silicon area. This benefit provides the designer 3 EL) 6
with an extremely efficient device for use in battery s CIE] [LIE] D
and load management applications.. G D334 5CD] D
The SO-8 has been modfed through a customized . SO-8
leadframe for enhanced thermal characteristics and Top View
multiple-die capability making it ideal in a variety of
powerapplications. 1/Nhththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -12 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -4.5V -11.5
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A
IDM Pulsed Drain Current (D -46
Po @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70''C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage 18 V
To, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 50 ''C/W
1
8/25/06
|RF7420PbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGs = 0V, ID = -250pA
AV
Rrosom Static Drain-to-Source On-Resistance - - 14 VGS = -4.5V, ID = -11.5A co
- - 17.5 mn Ves = -2.5V, ID = -9.8A ©
- - 26 N/ss = -1.8V, ID = -8.1A ©
VGS(th) Gate Threshold Voltage -0.4 - -0.9 V VDS = VGs, ID = -250pA
gfs Forward Transconductance 32 - - S l/ns = -1OV, ID = -11.5A
loss Drain-to-Source Leakage Current - - -1.0 PA Vos = -9.6V, VGS = 0V
- - -25 Vos = -9.6V, VGS = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = AN
Gate-to-Source Reverse Leakage - - 100 VGS = 8V
% Total Gate Charge - 38 - lo = -11.5A
Qgs Gate-to-Source Charge - 8.1 - nC Ws = RN
di Gate-to-Drain ("Miller") Charge - 8.7 - VGs = -4.5V ©
tam) Turn-On Delay Time - 8.8 13 ns VDD = -6V, VGs = -4.5V
tr Rise Time - 8.8 13 ID = -1.0A
tum) Turn-Off Delay Time - 291 437 Ro = 69
t, Fall Time - 225 338 Rs = 69 co
Ciss Input Capacitance - 3529 - VGS = 0V
Coss Output Capacitance - 1013 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 656 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 A showing the
ISM Pulsed Source Current - - -46 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, N/ss = 0V ©
tn Reverse Recovery Time - 62 93 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 61 92 pC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle s 2%.
(3) Surface mounted on 1 in square Cu board, t s 10sec.
