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IRF7422D2TRPBF ,-20V FETKYElectrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Uni ..
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IRF7422D2TRPBF
-20V FETKY
PD - 95310
International
Tart, Rectifier |RF7422D2PbF
FETKYTM MOSFET 8 Schottky Diode
o Co-packaged HEXFETS Power
MOSFET and Schottky Diode “311 "A . 831' D VDSS = -20V
0 Ideal For Buck Regulator Applications AcIIc2-
. P-Channel HEXFET ' R = 0.09Q
. Low vF Schottky Rectifier s CI DS(on)
. Generation 5 Technology 0014 =
q SO-8 Footprint A Schottky Vf 0.521/
. Lead-Free Top View
Description
The FETKYTM family of Co-packaged HEXFEl's and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
Parameter Maximum Units
ID@TA=25°C C ti C) . C t V 45v -4.3
ID @ TA = 70°C on anOUS ram urren t es @ - . -3.4 A
IDM Pulsed Drain Current C) -33
PD @TA = 25°C . . . 2.0
PD @TA = 70''C Power Dissipation 1.3
Linear Derating Factor 16 mwrc
Veg Gate-to-Source Voltage 1 12 V
dv/dt Peak Diode Recovery dv/dt Q) -5.0 V/ns
TJ Tsrs Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Param eter Maximum Units
' l Junction-to-Ambient q) 62.5 "CAN
Notes:
co Repetitive rating - pulse width limited by max. junction temperature (see rig. 11)
e ISD S -2.2A, di/dt S -50A/ps, VDD S V(BR)DSSv Tu S 150°C
© Pulse width I 300ps - duty cycle S 2%
© Surtyie mounted on FR-4 board, t s 10sec.
1
10/13/04
IRF7422D2PbF International
TOR Rectifier
MOSFET Electrical Characteristics @ To-- - 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)D33 Drain-to-Source Breakdown Voltage -20 - - V l/ss = 0V, ID- - -2500A
RD8(0n) Static Drain-toSource On-Resistance - 0.07 0.09 n l/ss = -4.51/, ID = -2.2A ©
- 0.115 0.14 Vss=-2.7V, ID=-1.8A©
VGS(th) Gate Thresh old Voltage -0.70 - - V Ws = Vss, ID = -250HA
gts Forward Transconductance 4.0 - - S Vos = -16V, ID = -2.2A
loss Drain-toSource Leakage Current - - -1.0 pA Vos = -16V, Ws = 0V
- - -25 Vos-- - -16V, Ws-- - ov, Tu=125''C
IGSS Gate-to-Source Forward Leakage - - -100 n A Vss-= - -12V
Gate-to-Source Reverse Leakage - - 100 Vss = 12V
09 Total Gate Charge - 15 22 ID = -2.2A
Q95 Gate-to-Source Charge - 2.2 3.3 nC Ws = -16V
di Gate-to-Drain ("Miller") Charge - 6.0 9.0 l/ss = -4.5V, See Fig. 6 and 9 ©
tdwn) Turn-On Delay Time - 8.4 - Wry = -10V
tr Rise Time - 26 - ns ID = -2.2A
td(off) Turn-Off Delay Time - 51 - Ro = 6.0n
tr Fall Time - 33 - RD = 4.59, See Fig. 10 ©
CISS Input Capacitance - 610 - Veg = 0V
Coss Output Capacitance - 310 - pF Ws = -15V
Crss Reverse Transfer Capacitance - 170 - l = 1.0MHz, See Fig. 5
MOSFET Source- Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -2.5
ISM Pulsed Source Current (Body Diode) - - -17 A
I/so Body Diode Forward Voltage - - -1.0 V To = 25°C, IS = -1.8A, Veg = 0V
trr Reverse Recovery Time (Body Diode) - 56 84 ns Tu = 25''C, V = -2.2A
er Reverse RecoveryCharge - 71 110 nC di/dt = -100A/us ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C
1.8 A 50% Duty Cycle. Rectangular Wave, Tc = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or 3us Rect. pulse FdloMng any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward voltage drop 0.57 If = 3.0, I] = 25''C
0.77 If = 6.0, T] = 25°C
0.52 V " 3.0, T] =125''C
0.79 If: 6.0, T] = 125°C
lrm Max. Reverse Leakage current 0.13 mA Vr = 20V T] = 25''C
18 T] =125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Ch arge 4900 V/ps Rated Vr
(HEXFET s the reg TM for International Rectifier Power MOSFET‘S )
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