IC Phoenix
 
Home ›  II27 > IRF744,450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF744 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF744IRN/a30avai450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRF744 ,450V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low thermal resistance and ..
IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93893AIRF7450SMPS MOSFET®HEXFET Power MOSFET
IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω Ω Ω Ω Ω@V = 10V 2.5AGS ..
IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω Ω Ω Ω Ω@V = 10V 2.5AGS ..
IRF7450PBF , SMPS MOSFET HEXFET Power MOSFET
IRF7450TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17@V = 10V 2.5AGS Lead-F ..
ISL28291FBZ , Single and Dual Single Supply Ultra-Low Noise, Low Distortion Rail-to-Rail Output, Op Amp
ISL28474FAZ , Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifier and Precision Operational Amplifier
ISL28474FAZ , Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifier and Precision Operational Amplifier
ISL29000IROZ-T7 , Ambient Light Photo Detect IC
ISL29001IROZ-T7 , Light-to-Digital Sensor
ISL29003IROZ , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface


IRF744
450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. International
162R Rectifier
PD-9.1000
I R F744
HEXFE1® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
" RDS(on) = 0.639
S ID=88A
'ips-i-i-iii"
((r"-'''-'i''ii'ii'is
TO-220AB
Parameter Max. Units
10 @ To = 25°C Continuous Drain Current, Ves @ 10 V 8.8
In @ To = 100°C Continuous Drain Current, Vas © 10 V 5.6 A
lou Pulsed Drain Current C) 35
Po @ Tc = 25"C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGs Gate-to-Source Voltage $20 V
EAs Single Pulse Avalanche Energy © 540 m1
lAR Avalanche Current Ci) 8.8 A
EAR Repetitive Avalanche Energy co 13 md
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
Tu Operating Junction and -55 to +150
Tsm Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nam) (
Thermal Resistance '
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 1 .O
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Flam Junction-to-Ambient - - 62
I R F744
Electrical Characteristics tg) TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(snmss Drain-to-Source Breakdown Voltage 450 - - V VGs=0V, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.63 Q Ves=1OV, lir--5.3A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS. lo: 250pA
gfs Forward Transconductance 4.5 - - S Vps=50V, kr=5.3A ©
. - - 25 Vos=450V, VGs=0V
loss Drain-to-Source Leakage Current - - 250 ISA Vos=360V, Vcs=OV, Tr=1250C
lass Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
Qg Total Gate Charge - - 80 ID=8.8A
Qgs Gate-to-Source Charge - - 12 nC Vos=860V
di Gate-to-Drain ("Miller") Charge - - 41 VGs=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.7 - Vop=225V
tr Rise Time - 28 - n s |D=8.8A
tdem) Turn-Off Delay Time - 58 _ Rty=9.1n
tr Fall Time - 27 - Ro--25n See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tr1vrt"lJ.ltiind.') D
nH from package (i]
Ls Internal Source Inductance - 7.5 - Ind center 6f E
die contact s
Ciss Input Capacitance - 1400 - Ves=0V
Cass Output Capacitance - 370 - PF Vos= 25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 8 8 MOSFET symbol D
(Body Diode) . A showing the Fir
ISM Pulsed Source Current - - as integral reverse G :3.
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls-HMA, Vss=OV ©
tn Reverse Recovery Time - 490 740 ns TJ=25°C, IF=8.8A
er Reverse Recovery Charge - 3.2 4.8 wc di/dt=100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=12mH
RG=25§2, |AS=8.8A (See Figure 12)
© ISDSBBA, di/dts200A/ws, VDDSV(BR)DSS. .
TJS150°C
© Pulse width S 300 us; duty cycle 32%.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED