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IRF7450TRPBF
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tart, Rectifier
Applications
0 High frequency DC-DC converters
o Lead-Free
SMPS MOSFET
PD- 95306
IRF7450PbF
HEXFET© Power MOSFET
RDS(on) max
0.17Q@Ves = 10V
Benefits
q Low Gate to Drain Charge to Reduce B
Switching Losses L D
q Fully Characterized Capacitance Including 7:13: D
Effective Coss to Simplify Design (See em: D
App. Note AN1001) 5
. Fully Characterized Avalanche Voltage DE D
n rr nt . -
a d Cu e Top View SO 8
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 2.5
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 2.0 A
IDM Pulsed Drain Current C) 20
PD @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
l/ss Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 11 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
fur, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
Notes co through © are on page 8
1
10/12/04
IRF7450PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.17 Q Vss = 10V, ID = 1.5A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, l/ss = 0V
- - 250 VDs = 160V, Vss = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A Vas = 30V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -30V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.6 - - S Vos = 50V, ID = 1.5A
Qg Total Gate Charge - 26 39 ID = 1.5A
Qgs Gate-to-Source Charge - 6.0 9.0 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 12 18 Vss = 10V,
tdwn) Turn-On Delay Time - 10 - VDD = 100V
t, Rise Time - 3.0 - ns ID = 1.5A
td(oit) Turn-Off Delay Time - 17 - Rs = 6.09
if Fall Time - 18 - Vas = 10V ©
Ciss Input Capacitance - 940 - l/ss = 0V
COSS Output Capacitance - 160 - Vos = 25V
Crss Reverse Transfer Capacitance - 33 - pF f = 1.0MHz
Coss Output Capacitance - 1100 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 66 - Vas = 0V, VDS = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 25 - Vas = 0V, VDs = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 230 mJ
IAR Avalanche CurrentCD - 2.5 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 20 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 1.5A, VGs = 0V ©
trr Reverse Recovery Time - 97 146 ns TJ = 25°C, IF = 1.5A
Qrr Reverse RecoveryCharge - 350 525 nC di/dt = 100A/ps ©
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