IRF7452QTRPBF ,100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications. This surface mount SO-8can dramatically reduce board space and is alsoavailable in ..
IRF7452QTRPBF ,100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package IRF7452QPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceV ..
IRF7452TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Voss RDS(on) max ID
. High frequency DC-DC 100V 0.060Q 4.5A
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IRF7452QTRPBF
100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
END OF LIFE
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
Description
These HEXFET® Power MOSFET's in SO-8
package utilize the lastest processing techniques
to achieve extremelylow on-resistance per silicon
area. Additional features ofthese HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in avariety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
IRF7452OPbF
HEXFET© Power MOSFET
VDss RDS(on) max In
100V 0.0609 4.5A
s [LIL-l ' ‘3ij D
s E1122 H 71]: D
s :11:3 l 5313 D
G LL“ Mu D
Top View SO-8
s d dP k
Base part number Orderable part number Package tan ar ac TL Replacement Part Number
Type Form Quantity Notice
lRF7452OPbF FlF7452t2TRPbF som Tape and Reel 4000 EOL 529 Pl r h th E L H n m r IR' w it for
IRF/4520PbF SO-8 Tube 95 EOL 529 guidance
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 4.5
ID © TA = 70°C Continuous Drain Current, Vas © 10V 3.6 A
IDM Pulsed Drain Current (D 36
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/''C
Ves Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes C) through © are on page 8
1
12/19/14
END OF LIFE
IRF7452QPbF
International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Veg = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA co
RDS(0n) Static Drain-to-Source On-Resistance - 0.060 Q Vss = 10V, ID = 2.7A (9
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vros = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - 25 pA Vros = 100V, l/tss = 0V
- - 250 Vos = 80V, Vas = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 24V
Gate-to-Source Reverse Leakage - - -100 VGS = -24V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 3.4 - - S Vos = 50V, ID = 2.7A
% Total Gate Charge - 33 50 ID = 2.7A
Qgs Gate-to-Source Charge - 7.3 11 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 16 24 V63 = 10V, 69
td(on) Turn-On Delay Time - 9.5 - Vor) = 50V
tr Rise Time - 11 - ns lo = 2.7A
td(0ff) Turn-Off Delay Time - 16 - Rs = 6.09
t, Fall Time --.- 13 --.- Vss = 10V (O
Ciss Input Capacitance - 930 - l/ss = 0V
Coss Output Capacitance - 300 - l/ce = 25V
Crss Reverse Transfer Capacitance - 84 - pF f = 1.0MHz
Coss Output Capacitance - 1370 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
C,,, 'r,ryil-r2sapsar'i""nr"a 17n \luo - no, \IUo - nnv, f - 1 mm;
Coss eff. Effective Output Capacitance - 280 - Vss = 0V, VDs = 0V to 80V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche CurrenKD - 4.5 A
EAR Repetitive Avalanche Energy0) - 0.25 ml
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© - 50 °C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - 2.3 .
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 36 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 2.7A, Vas = 0V (4)
tn Reverse Recovery Time - 77 120 ns Tu = 25°C, IF = 2.7A
a,, Reverse RecoveryCharge - 270 410 nC di/dt = 100A/ps ©
2
