IRF7456PBF , SMPS MOSFET
IRF7456TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7457 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93882DIRF7457SMPS MOSFET®HEXFET Power MOSFET
IRF7457TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93882DIRF7457SMPS MOSFET®HEXFET Power MOSFET
IRF7457TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsl High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters with S ..
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29028AIROZ-T7 , Low Power Ambient Light and Proximity Sensor with Intelligent Interrupt and Sleep Modes
ISL29028IROZ-T7 , Low Power Ambient Light and Proximity Sensor with Intelligent Interrupt
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
IRF7456-IRF7456TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93840C
International
TOR Rectifier SMPS MOSFET lRF7456
HEXFET© Power MOSFET
Ap.p..litP.1ions Voss RDS(on) max lr,
. High Frequency DC-DC Converters 20V 0 00659 16A
with Synchronous Rectification .
Benefits
q Ultra-Low RDS(on) at 4.5V l/ss s [LIL-l ' a D
0 Low Charge and Low Gate Impedance to $2 7:113
Reduce Switching Losses s E: D
. Fully Characterized Avalanche Voltage s W3 6-LUY D
and Current em“ 55130
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage 1 12 V
In @ TA = 25°C Continuous Drain Current, Vas @ 10V 16
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 13 A
IDM Pulsed Drain Current© 130
PD @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient© 50 °C/W
Typical SMPS Topologies
0 Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes co through 60 are on page 8
1
8/11/08
IRF7456
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
- 0.00470.0065 Q Vas = 10V, ID = 16A ©
RDS(on) Static Drain-to-Source On-Resistance - 0.00570.0075 Vss = 4.5V, ID = 13A ©
- 0.011 0.020 VGS = 2.8V, ID = 3.5A ©
Vegan) Gate Threshold Voltage 0.6 -- 2.0 V VDs = Vas, ID = 250pA
loss Drain-to-Source Leakage Current _- _- 12000 pA VS: : 12:, V2: : g, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA Ves = 12V
Gate-to-Source Reverse Leakage - - -200 Vss = -12V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 44 - - S Vos = 10V, ID = 16A
% Total Gate Charge - 41 62 ID = 16A
095 Gate-to-Source Charge - 9.7 15 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 18 27 VGS = 5.0V, ©
td(on) Turn-On Delay Time - 20 - VDD = 10V
t, Rise Time - 25 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 50 - Rs = 6.09
tt Fall Time - 52 - Vas = 4.5V ©
Ciss Input Capacitance - 3640 - Ves = 0V
Coss Output Capacitance - 1570 - Vos = 15V
Crss Reverse Transfer Capacitance - 330 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 250 mJ
IAR Avalanche Current© - 16 A
EAR Repetitive Avalanche Energy© - 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ 130 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, ls = 2.5A, VGs = 0V ©
tr, Reverse Recovery Time - 48 72 ns TJ = 25°C, IF = 2.5A
Qrr Reverse RecoveryCharge - 74 110 nC di/dt = 100A/ps ©
2
