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IRF7460TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
PD - 95308
TOR 'Uctifier SMPS MOSFET IRF7460PbF
. . HEXFET® Power MOSFET
Applications
. High Frequency Isolated DC-DC
Converters with Synchronous Rectification Voss RDS(0n) max(mf2) ID
for Telecom and Industrial Use 20V 10@Ves = 10V 12A
0 High Frequency Buck Converters for
Computer Processor Power
. Lead-Free
Benefits s E1 8 E D
s m2 H 71:: D
o Ultra-Low Gate Impedance (trf
s [Elia SID D
0 Very Low RDS(on)
q Fully Characterized Avalanche Voltage G E E D SO
and Current Top View
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 20 V
l/ss Gate-to-Source Voltage t 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A
IDM Pulsed Drain Current© 100
PD @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation® 1.6 W
Linear Derating Factor 0.02 mW/°C
Tu , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient S - 50 °C/W
Notes (O through s are on page 8
1
10/12/04
IRF7460PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.089 - V/°C Reference to 25°C, ID = 1mA
. . . - 7.2 10 Vas=10V,lD=12A ©
Roswn) Static Drain-to-Source On-Resistance - 10.5 14 mn Vss = 4.5V, ID = 9.6A 6)
Vegan) Gate Threshold Voltage 1.0 - 3.0 V VDs = Vas, ID = 250pA
loss Drain-to-Source Leakage Current ._-.- .__- 20 pA VDS = 16V, l/ss = 0V
- - 100 Vos =16V,VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
Dynamic © Tg = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 - - S Vos = 16V, ID = 9.6A
% Total Gate Charge - 19 - ID = 9.6A
Qgs Gate-to-Source Charge - 6.9 - nC Vos = 10V
qu Gate-to-Drain ("Miller") Charge - 6.0 - VGS = 4.5V, (9
Qoss Output Gate Charge - 17 26 Vss = 0V, VDS = 10V
td(on) Turn-On Delay Time - 11 - VDD = 10V
t, Rise Time - 6.9 - ns ID = 9.6A
td(off) Turn-Off Delay Time - 12 - Rs = 1.89
tf Fall Time - 4.3 - Vas = 4.5V CO
Ciss Input Capacitance - 2050 - Vas = 0V
Coss Output Capacitance - 1060 - Vos = 10V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 240 mJ
IAR Avalanche Currents - 9.6 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co -- - 100 p-n junction diode. S
Van Diode Forward Voltage - 0.8 1.3 V To = 2YC, ls = 9.6A, Vas = 0V ©
- 0.66 - To = 125°C, IS = 9.6A, Vss = 0V (D
trr Reverse Recovery Time - 44 66 ns Tu = 25°C, IF = 9.6A, VR=1OV
G, Reverse Recovery Charge - 60 90 nC di/dt = 100A/us ©
trr Reverse Recovery Time - 44 66 ns To = 125°C, IF = 9.6A, VR=1OV
Qrr Reverse Recovery Charge - 64 96 nC di/dt = 100A/ps ©
2
