IC Phoenix
 
Home ›  II27 > IRF7464,200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7464 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7464IORN/a50avai200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7464IRN/a2000avai200V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93895IRF7464SMPS MOSFET®HEXFET Power MOSFET
IRF7464 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.73Ω 1.2ABenefitsl Low Gate ..
IRF7464TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.73Ω 1.2A Lead-FreeBenefit ..
IRF7464TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7464PbFSMPS MOSFETHEXFET Power MOSFET
IRF7465 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD-93896IRF7465SMPS MOSFET®HEXFET Power MOSFET
IRF7465PBF , High frequency DC-DC converters, Lead-Free
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL31498EIUZ , ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers


IRF7464
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
SMPS MOSFET
PD- 93895
IRF7464
HEXFET6 Power MOSFET
t''lllirtril'll','em, DC DC converters Voss RDSion) max ID
g y 200V 0.739 1.2A
Benefits
o Low Gate to Drain Charge to Reduce
Switching Losses s DI‘ ' 331 D
o Fully Characterized Capacitance Including s Liz H A D
Effective Coss to Simplify Design, (See S D13 tlf :3: D
App. Note AN1001) 4 V
0 Fully Characterized Avalanche Voltage G D: E D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25''C Continuous Drain Current, VGS @ 10V 1.2
ID @ TA = 70''C Continuous Drain Current, VGS @ 10V 1.0 A
IDM Pulsed Drain Current C) 10
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage l 30 V
dv/dt Peak Diode Recovery dv/dt © 6.8 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Typical SMPS Topologies
0 Telecom 48V input Forward Converter
Notes C) through © are on page 8
1

4/25/00
IRF7464
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AVBWDSSIATJ Breakdown Voltage Temp. Coemcient - 0.23 - V/°C Reference to 25°C. ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.73 n VGS = 10V, ID = 0.72A ©
Vesah) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, VGS = 0V
- - 250 VDS = 160V, VGS = 0V, TJ = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 N/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 1.1 - - S VDS = 50V, ID = 0.72A
Qg Total Gate Charge - 9.5 14 ID = 0.72A
Qgs Gate-to-Source Charge - 2.5 3.8 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 4.6 6.9 VGS = 10V, ©
Won) Turn-On Delay Time - 11 - VDD = 100V
tr Rise Time - 9.5 - ns ID = 0.72A
ttsoft) Turn-Off Delay Time - 18 - Rs = Mn
tf Fall Time - 15 - VGs = 10V ©
Ciss Input Capacitance - 280 - VGs = 0V
Cass Output Capacitance - 52 - Vos = 25V
Crss Reverse Transfer Capacitance - 14 - pF f = 1.0MHz
Coss Output Capacitance - 330 - N/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 25 - VGS = 0V, Vros = 160V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 48 - Vss = 0V, VDs = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 68 mJ
IAR Avalanche Current© - 1.2 A
EAR Repetitive Avalanche Energy® - 0.25 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© - 50 °C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 10 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 0.72A, VGS = 0V ©
trr Reverse Recovery Time - 60 90 ns TJ = 25°C, IF = 0.72A
Gr Reverse RecoveryCharge - 130 200 nC di/dt = 100/Ups ©
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED