IRF7465TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.28@V = 10V 1.9AGS Lead-F ..
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ISL3158EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
IRF7465TRPBF
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD-95274
International
. . IRF7465PbF
Tart, Rectifier SMPS MOSFET
HEXFET© Power MOSFET
Applications Voss RDs(on) max ID
0 High frequency DC-DC converters
o Lead-Free
150V 0.289@VGS = 10V 1.9A
Benefits
q Low Gate to Drain Charge to Reduce 8
Switching Losses L D
q Fully Characterized Capacitance Including 7:13: D
Effective Coss to Simplify Design (See em: D
App. Note AN1001) 5
0 Fully Characterized Avalanche Voltage DE D
n rr n . -
a d Cu e t Top View so 8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.5 A
G, Pulsed Drain Current C) 15
PD @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 7.8 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
09/21/04
IRF7465PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.19 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.28 Q VGS = 10V, ID = 1.14A ©
VSS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 150V, VGS = 0V
- - 250 Vros = 120V, VGs = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 0.75 - - S VDs = 50V, ID = 1.14A
Qg Total Gate Charge - 10 15 ID = 1.14A
Qgs Gate-to-Source Charge - 2.7 4.0 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 5.0 7.5 Was = 10V
td(on) Turn-On Delay Time - 7.0 - VDD = 75V
tr Rise Time - 1.2 - ns ID = 1.14A
tam) Turn-Off Delay Time - 10 - Rs = 6.09
tr Fall Time - 9.0 - VGs = 10V ©
Ciss Input Capacitance - 330 - VGs = 0V
Coss Output Capacitance - 80 - Vos = 25V
Crss Reverse Transfer Capacitance - 16 - pF f = 1.0MHz
Coss Output Capacitance - 420 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 41 - VGs = 0V, VDs = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 76 - VGs = 0V, Vos = 0V to 120V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 40 mJ
IAR Avalanche Current© - 1.9 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - 15 integral reverse G
(Body Diode) co p-n junction diode. s
I/sn Diode Forward Voltage - - 1.3 V To = 25°C, Is = 1.14A, VGs = 0V ©
trr Reverse Recovery Time - 62 93 ns To = 25°C, IF = 1.14A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps ©
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