IC Phoenix
 
Home ›  II27 > IRF7474TRPBF,100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7474TRPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7474TRPBFIORN/a20000avai100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7474TRPBFIRN/a94avai100V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7474TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V100V 63m@V = 10V 4.5A GS in ..
IRF7474TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7474PbFHEXFET Power MOSFET
IRF7475 ,12V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA18S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS3 ..
IRF7476 ,12V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency 3.3V and 5V input Point-12V 8.0mΩ Ω Ω Ω Ω@V = 4.5 ..
IRF7476 ,12V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications.18S D2 7S DBenefits3 6S D Ultra-Low Gate Impedance4 5G D Very Low RDS(on)SO-8 Fully ..
IRF7477 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94094AIRF7477SMPS MOSFET®HEXFET Power MOSFET
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
ISL34340 ,WSVGA 24-Bit Long-Reach Video SERDES with Bidirectional Side-ChannelBlock DiagramSCL2I CSDAVCMGENERATORRAM SERIOPPRE-TXEMPHASIS3V/H/DESERIONMUXTDM 8b/10bDEMUXRGB24RX E ..
ISL35411DRZ-T7 , Quad Driver
ISL36411DRZ-T7 , Quad Lane Extender
ISL3680IR , Direct Conversion Transceiver
ISL3684 , Direct Down Conversion Transceiver


IRF7474TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95277
|RF7474PbF
International
Tart, Rectifier
HEXFET© Power MOSFET
Applications
0 Telecom and Data-Com 24 and 48V Voss Rtosion) max ID
input DC-DC converters 100V 63mf2@1has = 10V 4.5A
Motor Control
Uninterruptible Power Supply
Lead-Free
Benefits D
0 Low On-Resistance 75”: D
. High Speed Switching em: D
a Low Gate Drive Current Due to Improved 5
. . CTE] D
Gate Charge Characteristic
o Improved Avalanche Ruggedness and Top View SO-8
Dynamic dv/dt
. Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 4.5
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A
IDM Pulsed Drain Current (D 36
Pro @TA = 25°C Power Dissipation) 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
09/21/04

IRF7474PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance 50 63 m9 VGS = 10V, ID = 2.7A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 95V, VGS = 0V
- - 250 Vros = 80V, Ves = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 6.5 - - S VDs = 50V, ID = 2.7A
Qg Total Gate Charge - 27 41 ID = 2.7A
Qgs Gate-to-Source Charge - 10 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 9.0 - VGs = 10V,
td(on) Turn-On Delay Time - 14 - VDD = 50V
tr Rise Time - 7.9 - ns ID = 2.7A
tam) Turn-Off Delay Time - 16 - Rs = 6.09
tr Fall Time - 5.9 - VGs = 10V ©
Ciss Input Capacitance - 1400 - VGS = 0V
Coss Output Capacitance - 100 - Vos = 25V
Crss Reverse Transfer Capacitance - 56 - pF f = 1.0MHz
Coss Output Capacitance - 380 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 68 - VGs = 0V, VDs = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 110 - VGs = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 51 mJ
IAR Avalanche Current© - 2.7 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 36 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 2.7A, Ves = 0V ©
trr Reverse Recovery Time - 45 - ns TJ = 25°C, V = 2.7A
Qrr Reverse RecoveryCharge - 100 - nC di/dt = 100Alps ©
2 www.Irf.com

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED