IRF7484 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484PBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484Q ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7484QPbFBenefits®HEXFET Power MOSFET
IRF7484
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94446B
IRF7484
International
TOR Rectifier
Typical Applications
. Relayreplacement HEXFET© Power MOSFET
. Anti-Iock Braking System
o Air Bag Voss RDS(on) max (mn) ID
Benefits 40V 10@Vss = 7.0V 14A
. Advanced Process Technology
. Ultra LowOn-Resistance
. FastSwitching
. Repetitive Avalanche Allowed up to Tjmax
J 313 D
7:13 D
Description " 6:33 D
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFETO Power MOSFETs 5333 D
utilizes the latest processing techniques to achieve
extremelylow on-resistance per silicon area. Additional T Vi w SO-8
features of this HEXFET power MOSFET are a 150°C op e
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efhcient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGs @ 10V 11 A
IDM Pulsed Drain Current OD 110
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage * 8.0 V
EAS Single Pulse Avalanche Energy© 230 mJ
IAR Avalanche Current© See Fig.160, 16d, 19, 20 A
EAR Repetitive Avalanche Energy© mJ
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron. Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 50 °CNV
1
04/16/04
IRF7484 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250PA
AV
DSSIATJ Breakdown Voltage Temp. Coemcient - 0.040 - Vl°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 10 mn VGS = 7.0V, ID = 14A ©
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 40 - - S Vos = 10V, ID = 14A
loss Drain-to-Source Leakage Current - - 20 PA Ws = 40V, l/ss = 0V
- - 250 Ws = 32V, l/ss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A l/ss = 8.0V
Gate-to-Source Reverse Leakage - - -200 l/ss = -8.0V
% Total Gate Charge - 69 100 ID = 14A
095 Gate-to-Source Charge - 9.0 - nC Vros = 32V
di Gate-to-Drain ("Miller") Charge - 16 - VGS = 7.0V
tdmn) Turn-On Delay Time - 9.3 - I/oo = 20V ©
tr Rise Time - 5.0 - ns ID = 1.0A
tam“) Turn-Off Delay Time - 180 - Rs = 6.29
tf Fall Time - 58 - I/ss = 7.0V
Ciss Input Capacitance - 3520 - l/ss = 0V
Coss Output Capacitance - 660 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 76 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) ' showing the
ISM Pulsed Source Current - - 1 10 integral reverse G
(Body Diode) O) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 2.3A, VGS = 0V ©
trr Reverse Recovery Time - 59 89 ns Tu = 25°C, IF = 2.3A
G, Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by s 'so s: 14A, di/dt s 140A/ps, VDDS V(BR)oss,
max. junction temperature. Tu s: 150°C.
© Pulse width S 400ps; duty cycle S 2%. © Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
© Surface mounted on 1 in square Cu board. avalanche performance.
GD Starting TJ = 25°C, L = 2.3mH, R6 = 259,
IAS-- 14A. (See Figure 12).
2
