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IRF7484QIORN/a1avai40V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7484Q ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF7484QTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7484QPbFBenefits®HEXFET Power MOSFET

IRF7484Q
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Typical Applications
. Relay replacement
. Anti-lock Braking System
PD - 94803A
IRF7484Q
HEXFET® Power MOSFET
AUTOMOTIVE MOSFET
RDS(on) max (mQ) In
. Air Bag VDSS
Benefits 40V
o Advanced Process Technology
10@Vss = 7.0V 14A
q Ultra Low On-Resistance
. Fast Switching
o Repetitive Avalanche Allowed up to ijax
' 831: D
7_LL1 D
Description 6-IIL D
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs Mu D
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional T Vi SO-8
features of this HEXFET power MOSFET are a 150°C op Iew
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 14
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 11 A
IDM Pulsed Drain Current C) 110
PD @TA = 25°C Power Dissipation@ 2.5 W
Linear Derating Factor 0.02 W/''C
Ves Gate-to-Source Voltage 1 8.0 V
EAS Single Pulse Avalanche Energy© 230 mJ
IAR Avalanche Current© See Fig.160, 16d, 19, 20 A
EAR Repetitive Avalanche Energy© mJ
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
RQJL Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient G) - 50 °CAN
1
01/04/05

IRF7484Cl International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.040 - V/°C Reference to 25°C, ID = 1 mA
RDS(on) Static Drain-to-Source On-Resistance - - 10 m9 Vss = 7.0V, lo = 14A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Ihos = Vas, ID = 250pA
gfs Forward Transconductance 4O - - S VDs = 10V, ID = 14A
bss Drain-to-Source Leakage Current - - 2O pA VDS = 40V, VGS = 0V
- - 250 VDs = 32V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 8.0V
Gate-to-Source Reverse Leakage - - -200 Vas = -8.0V
% Total Gate Charge - 69 100 ID = 14A
Qgs Gate-to-Source Charge - 9.0 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 16 - l/ss = 7.0V
tdwn) Turn-On Delay Time - 9.3 - VDD = 20V ©
tr Rise Time - 5.0 - ns ID = 1.0A
td(oti) Turn-Off Delay Time - 180 - Rs = 6.29
tt Fall Time - 58 - VGS = 7.0V
Ciss Input Capacitance - 3520 - Vas = 0V
Coss Output Capacitance - 660 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 76 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 1 IO integral reverse s
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 2.3A, Vas = 0V ©
trr Reverse Recovery Time - 59 89 ns TI, = 25°C, Ir = 2.3A
Qrr Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by s ISDS 14A, di/dt S 140A/ps, VDD S V(BR)Dss,
max. junction temperature. T, S 150°C.
© Pulse width S 400ps; duty cycle S 2%. © Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
© Surface mounted on 1 in square Cu board. avalanche performance.
© Starting TJ = 25°C, L = 2.3mH, Ra = 259,
IAS-- 14A. (See Figure 12).
2

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