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IRF7488TRPBF
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95283
International
TOR Rectifier IRF7488PbF
HEXFET@ Power MOSFET
Applications
VDss RDS(on) max th,
0 High frequency DC-DC converters 80V 29mf2@Vss=10V 38nC
o Lead-Free
Benefits
s EEE‘ ' 5 113 D
o Low Gate-to-Drain Charge to Reduce S BIZ 73:: D
Switching Losses a E 6
o Fully Characterized Capacitance Including S E E D
Effective Cogs to Simplify Design, (See G =-4 5333 D
App. Note AN1001) T Vi SO-8
o Fully Characterized Avalanche Voltage op lew
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 80 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 6.3
In @ TA = 70°C Continuous Drain Current, VGs @ 10V 5.0 A
IDM Pulsed Drain Currents 50
Pro @TA = 25''C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 20 mWf'C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rox Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
Notes OD through GD are on page 9
1
09/21 /04
IRF7488PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V N/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.089 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 24 29 mf2 VGs = 10V, ID = 3.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, VGS = 0V
- - 250 N/ns = 64V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 9.3 - - S Vros = 15V, ID = 3.8A
% Total Gate Charge - 38 57 ID = 3.8A
Qgs Gate-to-Source Charge - 9.1 nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 12 VGS = 10V,
td(on) Turn-On Delay Time - 13 - VDD = 40V
tr Rise Time - 12 - ns ID = 3.8A
tu(oit) Turn-Off Delay Time - 44 - Rs = 9.19
tf Fall Time - 16 - VGS = 10V ©
Ciss Input Capacitance - 1680 - VGs = 0V
Coss Output Capacitance - 270 - Vos = 25V
Crss Reverse Transfer Capacitance - 32 - pF f = 1.0MHz
Coss Output Capacitance - 1760 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 170 - N/ss = 0V, Vros = 64V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 340 - VGs = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 96 mJ
IAR Avalanche CurrentCD - 3.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Ci) - - 50 p-n junction diode. s
Vw Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 3.8A, VGS = 0V ©
trr Reverse Recovery Time - 65 98 ns TI, = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge - 190 290 nC di/dt = 100A/ps ©
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