IC Phoenix
 
Home ›  II27 > IRF7494,150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7494 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7494IORN/a50avai150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7494IRN/a119avai150V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7494 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters44m

IRF7494
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
- 94641 B
IIRF7494
HEXFETO Power MOSFET
Applications Voss RDS(on) max ID
q Hi h fre uenc DC-DC converters
g q y 150V 44mQ@VGS = 1011 5.2A
Benefits
0 Pt Gate to Drain Charge to Reduce s E1 83]: D
Switching Losses 2 7 _ ')'.._'istfa'i'iii,
0 Fully Characterized Capacitance Including s E E 333 D ,/i/i)r,c:r,,tiy
Effective Cogs to Simplify Design, (See s E113 6:11 D /Y '
App. Note AN1QO1) G E4 g3]: D
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 150 V
l/ss Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 5.2 A
ID @ TA = 100°C Continuous Drain Current, I/ss @ 10V 3.7
'DM Pulsed Drain Current C) 42
PD @TA = 25°C Maximum Power Dissipation 3.0 W
Linear Derating Factor O.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rem. Junction-to-Drain Lead - 20 °C/W
ROJA Junction-to-Ambient (PCB Mount) © - 50
Notes co through © are on page 8
1
03/27/08

IRF7494
Static tii) T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 -- -- V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.15 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 35 44 mf2 Vas = 10V, b = 3.1A ©
VGS(lh) Gate Threshold Voltage 2.5 - 4.0 V Vos = VGS, b = 250pA
loss Drain-to-Source Leakage Current - - 10 PA Vos = 120V, Vas = 0V
- - 250 Vos = 120V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic Iii) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 12 - - S Vos = 50V, ID = 5.2A
q, Total Gate Charge --.- 36 54 ID = 3.1A
Qgs Gate-to-Source Charge -- 7.5 -- nC Vos = 75V
di Gate-to-Drain ("Miller") Charge - 13 - l/ss = 10V ©
tum) Turn-On Delay Time - 15 - VDD = 75V
tr Rise Time - 13 - b = 3.1A
tum) Turn-Off Delay Time - 36 - ns Rs = 6.59
tf Fall Time - 14 - Vas = 10V ©
Ciss Input Capacitance - 1750 - Vas = 0V
Cass Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Cass Output Capacitance - 870 - Vss = 0V, VDS = 1.0V, f = 1.0MHz
Cass Output Capacitance - 120 - l/ss = 0V, VDS = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 170 -- l/ss = 0V, Vos = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 370 mJ
[AR Avalanche Current LO - 3.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 42 integral reverse G
(Body Diode) CD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 3.1A, Vas = 0V ©
trr Reverse Recovery Time - 55 - ns TJ = 25°C, IF = 3.1 A, VDD = 25V
Qrr Reverse Recovery Charge - 140 - nC di/dt = 100NUS ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED