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IRF7494TRPBFIRN/a130avai150V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7494TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications V R max IDSS DS(on) D High frequency DC-DC converters44m @V = 10V150V Ω 5.1A Lead-Fr ..
IRF7495 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters22m @V = 10V100V

IRF7494TRPBF
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
Apgitila’sons DC DC t VDSS RDS(on) max ID
q lg requency - conver ers
Benefits
0 Low Gate to Drain Charge to Reduce s CE 83]: D
- 95349C
lRF7494PbF
HEXFETO Power MOSFET
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
G E11: $3]: D
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 150 V
Vas Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 5.1
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 4.0 A
'DM Pulsed Drain Current O) 40
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 33 V/ns
To Operating Junction and -55 to + 150 o
TSTG Storage Temperature Range C
Thermal Resistance
Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead © -- 20
Rm Junction-to-Ambient (PCB Mount) © -- 50 °C/W
Notes co through (D are on page 8
1
10/15/09

IRF7494PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmSS Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 35 44 mg Vss = 10V, ID = 3.1A ©
VGS(th) Gate Threshold Voltage 2.5 -- 4.0 V Vrss = Vss, ID = 250pA
loss Drain-to-Source Leakage Current -- -- 10 PA Vos = 120V, Ves = 0V
- - 250 Vos = 120V, Vss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 12 - - S Vos = 50V, ID = 5.1A
q, Total Gate Charge - 35 53 ID = 3.1A
Qgs Gate-to-Source Charge - 6.4 - nC Vos = 75V
di Gate-to-Drain ("Miller") Charge - 13 - Vas = 10V ©
td(on) Turn-On Delay Time - 9 - VDD = 75V
t, Rise Time - 1O - ID = 3.1A
td(off) Turn-Off Delay Time -- 29 -- ns Rs = 6.89
tr Fall Time - 14 - Vss = 10V ©
Ciss Input Capacitance - 1783 - Vss = 0V
Coss Output Capacitance - 222 - Vos = 25V
Crss Reverse Transfer Capacitance - 104 - pF f = 1.0MHz
Cass Output Capacitance - 886 - Vas = OV, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 121 - Vas = 0V, 1/ros = 120V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 189 - Vas = 0V, Vos = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 262 mJ
|AR Avalanche Current LO - 3.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current -- _ 2 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 40 integral reverse G
(Body Diode) CO p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 3.1A, l/ss = 0V ©
trr Reverse Recovery Time - 45 - ns TJ = 25°C, IF = 3.1A, VDD = 25V
Qrr Reverse Recovery Charge - 93 - nC di/dt = 100A/ps ©
2

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