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IRF7503-IRF7503TR
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
International
Titat, Rectifier
PD - 9.1266G
IRF7503
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micr08 package, with half the footprint area of the
HEXFET® Power MOSFET
Top View
5 Ill01
741401 VDSS=30V
5:11:02 RDS(on) = 0.1359
. . . . Mi r
standard SO-8, provides the smallest footprint available in C 08
an SOIC outline. This makes the Micr08 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) ofthe Micr08 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 2.4
In @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A
IDM Pulsed Drain Current co 14
PD@TA= 25°C Power Dissipation 1.25 W
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,T3TG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
Ran Maximum Junction-to-Ambient) - 100 °CNV
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97

IRF7503 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coeffcient - 0.059 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance : : 8;: n V2: =" 4'.ti'f,==)2p13,
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = VGs, b = 250pA
gfs Forward Transconductance 1.9 - - S Ws = 10V, ID = 0.85A
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, VGS = 0V
- - 25 V93 = 24V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
Gate-to-Source Reverse Leakage - - 100 l/ss = 20V
09 Total Gate Charge - 7.8 12 ID = 1.7A
Qgs Gate-to-Source Charge - 1.2 1.8 nC l/os = 24V
di Gate-to-Drain ("Miller") Charge - 2.5 3.8 VGs = 10V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 4.7 - VDD = 15V
tr Rise Time - 10 - ID = 1.7A
1mm Turn-Off Delay Time - 12 - ns Rs = 6.19
tf Fall Time - 5.3 - RD = 8.79, See Fig. 10 ©
Ciss Input Capacitance - 210 - VGs = 0V
Cogs Output Capacitance - 80 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 1.25 _ _
(Body Diode) A showing the ar
ISM Pulsed Source Current ' - - 14 integral reverse G (tl-a.
(Body Diode) C) p-n junction diode. s
l/so Diode Forward Voltage - - 1.2 V To = 25°C, Is = 1.7A, I/ss = 0V ©
trr Reverse Recovery Time - 4O 60 ns TJ = 25°C, IF = 1.7A
G, Reverse RecoveryCharge - 48 72 nC di/dt = 1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by (3) Pulse width 3 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© ' s: 1.7A, di/dt s 120A/ps, VDD s: V(BR)DSS’ Ci) Surface mounted on FR-4 board, ts 10sec.
T Js 150°C

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