IRF820B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRF820PBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF822 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.nu .
m.—
FAIRCHILD SEMICONDUCTOR ELI os:lllvuawiu; DDE?'=ILLI i? r
M
IRF420-423fiRF820-82 ..
IRF822. ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.applications, fi)
such as switching power supplies, converters, AC and DC
motor controls, relay a ..
IRF822FI ,N-channel enhancement mode power MOS transistor, 500V, 1.9AABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF
820 822 820FI 822Fl
Vos Drain-source V ..
IRF8252TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 25VV Gate-to-S ..
ISL60002DIH330Z-TK , Precision Low Power FGA™ Voltage References
ISL6115ACBZ , 12V Power Distribution Controllers
ISL6115CB ,Power Distribution ControllersFeatures• HOT SWAP Single Power Distribution Control (ISL6115 This family of fully featured hot swa ..
ISL6115CBZA , Power Distribution Controllers
ISL6115CBZA , Power Distribution Controllers
ISL6116CB ,Power Distribution ControllersBlock Diagram VDD+-POR R+QN8V RPWRONISET-QSUV-++VREF-ENABLE12V ISENPGOODISL611X20µAUV DISABLECLIM O ..
IRF820B
500V N-Channel MOSFET
IRF820B/IRFS820B November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF820B IRFS820B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 2.5 2.5 * A D C - Continuous (T = 100°C) 1.6 1.6 * A C I (Note 1) Drain Current - Pulsed 8.0 8.0 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 2.5 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 49 33 W D C - Derate above 25°C 0.39 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case Max. 2.57 3.74 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
