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IRF8252TRPBF
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters
International
a:io:RIectifier
Applications
q Synchronous MOSFET for Notebook
Processor Power
q Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
q Very Low Gate Charge
and Current
Low Thermal
Description
Very Low RDS(on) at 4.5V Vtss
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V Vss Max. Gate Rating
100% tested for Rg
RoHS Compliant (Halogen Free)
Resistance
PD - 96158
IRF8252PbF
H EXFET© Power MOSFET
Voss RDS(on) max Clg
SEED‘ “3310
SEEDZ H IUD
SEED3 W: SID D
G m1“ 5:310
Top View SO-8
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The lRF8252PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 25 V
l/tas Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Ves © 10V 25
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 20 A
IDM Pulsed Drain Current OD 200
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 150 'C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead (9 - 20
RNA Junction-to-Ambient C9C9 _ 50 OC/W
Notes co through S are on page 9
1
07/07/08
IRF8252PbF International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vss = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.018 - VPC Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance -- 2.0 2.7 Vss = 10v, ID = 25A ©
-- 2.9 3.7 mQ Vss = 4.5V, ID = 20A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vss, ID = 100PA
AVGSuh) Gate Threshold Voltage Coefficient - -6.67 - mV/°C Vos = Vss, ID = 100pA
loss Drain-to-Source Leakage Current - - 1.0 Vos = 20V, Ves = 0V
- - 150 pA Vos = 20V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 Vas = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -20V
gfs Forward Transconductance 89 - - S Vos = 13V, ID = 20A
09 Total Gate Charge - 35 53
As, Pre-Vth Gate-to-Source Charge - IO - VDS = 13V
Ass Post-Wh Gate-to-Source Charge - 4.6 - Vss = 4.5V
di Gate-to-Drain Charge -- 12 -- nC ID = 20A
ngdr Gate Charge Overdrive - 8.9 - See Figs. 15 & 16
st Switch Charge (Qgsz + di) - 16 -
Qoss Output Charge - 26 - nC Vos = 16V, Vas = 0V
R, Gate Resistance - 0.61 1.22 Q
td(on) Turn-On Delay Time - 23 - VDD = 13V, Ves = 4.5V
t, Rise Time - 32 - ID = 20A
tdmm Turn-Off Delay Time - 19 - ns Ra = 1.89
tf Fall Time - 12 - See Fig. 18
Ciss Input Capacitance - 5305 - Vas = 0V
Cass Output Capacitance - 1340 - pF VDS = 13V
Crss Reverse Transfer Capacitance -- 725 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 231 mJ
|AR Avalanche Current OJ - 20 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current -- -- 3 1 A MOSFET symbol D
(Body Diode) . showing the
ISM Pulsed Source Current - - integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 20A, VGS = 0V OD
in Reverse Recovery Time - 19 29 ns Tu = 25°C, IF = 20A, VDD = 13V
2, Reverse Recovery Charge - 12 18 nC di/dt = 230A/ps oo
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
