IRF8788TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 30DSVV Gate-to-S ..
IRF8910 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @V ..
IRF8910PBF , HEXFET Power MOSFET
IRF8910TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @V ..
IRF8915 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) DDual SO-8 MOSFET for POLconverters in desktop, servers,18.3m
IRF8788-IRF8788TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
q Synchronous MOSFET for Notebook
Processor Power
q Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
0 Very Low Gate Charge
. Very Low RDS(on) at 4.5V Vss
0 Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
. 100% tested for Rg
0 Lead-Free
Description
PD - 97137A
IRF8788PbF
HEXFET*) Power MOSFET
VDSS RDS(on) max Clg
30V 2.8mQ@VGs =10V 44nC
smrl ' ID
51112 H ID
31113 _ IED
ta_ud-4 J_LD
Top View SO-8
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage t20
ID © T, = 25°C Continuous Drain Current, Vss © 10V 24
ID @ T, = 70°C Continuous Drain Current, Ves @ 10V 19 A
IDM Pulsed Drain Current C) 190
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
To Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 ''C/W
ROJA Junction-to-Ambient ©S - 50
Notes CO through © are on page 9
1
8/18/08
IRF8788PbF International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
Rosm) Static Drain-to-Source On-Resistance - 2.3 2.8 mn Vas = 10V, ID = 24A ©
- 3.04 3.8 Vas = 4.5V, ID =19A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vss, ID = 100pA
AVesuh) Gate Threshold Voltage Coefficient - -6.59 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 p A Vos = 24V, Vas = 0V
- - 150 VDS = 24V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 95 - - S Vos = 15V, ID = 19A
q, Total Gate Charge - 44 66
As, Pre-Vth Gate-to-Source Charge - 12 - l/rss = 15V
0952 Post-Vth Gate-to-Source Charge - 4.7 - n C Ves = 4.5V
di Gate-to-Drain Charge - 14 - ID = 19A
qud, Gate Charge Overdrive - 13.3 - See Figs. 17a & 17b
st Switch Charge (Qgsz + di) - 18.7 -
Qoss Output Charge - 22 - nC Vos = 16V, Vos = 0V
R, Gate Resistance - 0.54 1.09 Q
tum") Turn-On Delay Time - 23 - VDD = 15V, l/ss = 4.5V
t, Rise Time - 24 - ns ID = 19A
tum) Turn-Off Delay Time - 23 - Re = 1.89
t, Fall Time - 11 - See Fig. 15a & 15b
Ciss Input Capacitance - 5720 - Vas = 0V
Coss Output Capacitance - 980 - pF l/rss = 15V
Crss Reverse Transfer Capacitance - 450 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 230 mJ
|AR Avalanche Current OD - 19 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 190 A integral reverse G
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 19A, VGS = 0V ©
- - 0.75 V TJ = 25°C, IS = 2.2A, VGS = 0V ©
t,, Reverse Recovery Time - 24 36 ns Tu = 25°C, IF = 19A, VDD = 15V
0,, Reverse Recovery Charge -- 33 50 nC di/dt = 230A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
