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IRF9530-IRF9530.
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
ntarnati
1:22 Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt
Repetitive Avalanche Rated
P-Channel
175°C Operating Temperature
Ease of Paralleling
Simple Drive Requirements
o Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.320G
IRF953O
Rating
D Voss = M001/
RDS(OD) = 0.309
s ID - -12A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. LUnits
ID © Tc = 25°C Continuous Drain Current, Ves @ -10 V -12
lo @ Tc = 100°C Continuous Drain Current, I/ss © -10 V -8.2 A
[W Pulsed Drain Current CD -48
Po @ To = 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 'W/oc
Vas Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 400 m]
IAH Avalanche Current co -12 A
EAR Repetitive Avalanche Energy (1D 8.8 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
Tu Operating Junction and -55 to +175
Tsro Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfuin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ, Max. Units
Rm Junction-to-Case - - 1 .7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IRF9530
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage -100 - - V VGS=0V, ltr---250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.10 - V/°C Reference to 25°C, |D=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.30 Q Vss.---10V, Io=-7.2A ©
VGS(lh) Gate Threshold Voltage -2.0 - -4.0 V Vos--.Vss, ltr---250WA
gis Forward Transconductance 3.7 - - S Vos=-50V, ID=-7.2A 6)
loss Drain-to-Source Leakage Current - - -100 HA Vos=-100V, Ves=0V
- - -500 Vos=-80V, VGs=0V, TJ=150°C
loss Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
Ch, Total Gate Charge - - 38 Io=-12A
Qgs Gate-to-Source Charge - - 6.8 nt 1/ns=-80V
qu Gate-to-Drain ("Miller") Charge - - 21 VGs=-1OV See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 - VDo=-50V
tr Rise Time - 52 - ns lo=-12A
tam") Turn-Off Delay Time .-.r.- 31 - Re=12§2
t: Fall Time - 39 - Rrr--3.9n See Figure 10 GD
Lo Internal Drain Inductance - 4.5 - ttit,vri'i1.ltiei.') [_€E
nH from package tiS-l-ii')
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Ciss Input Capacitance - 860 - Vss=0V
Cass Output Capacitance - 340 - pF VDs=-25v
Crss Reverse Transfer Capacitance -.r..- 93 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -l 2 MOSFET symbol D
(Body Diode) A showing the b-ai,
ISM Pulsed Source Current _ -- - 48 integral reverse G EL“
(Body Diode) G) p-n junction diode. s
VSD Diode Forward Voltage - - -6.3 V TJ=25°C, ls=-12A, Vas=0V ©
tn Reverse Recovery Time - 120 240 ns TJ=25°C, lp=-12A
er Reverse Recovery Charge - 0.46 0.92 pC di/dt=100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
oc) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=4.2mH
RG=259, |As=-12A (See Figure 12)
© lsoS-12A, di/dts.140A/ws, VDDSV(BR)DSS.
TJS175°C
co Pulse width f 300 ps; duty cies 32%.
