IRF9530NLPBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-262 packageInternational
TOR RectifierW"“>Awa‘hced Process Technology
Surface Mount (IRF9530NS)
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IRF9530NLPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole (IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized devicedesignthatHEXFET PowerMOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEXM. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-holeversion (IRF9530NL) is available for low-
profile applications.
Absolute Maximum Ratings
PD- 95439
IRF9530NSPbF
IRF9530NLPbF
D VDSS = -100V
Roswn) = 0.20:2
ID=-14A
DzPak TO-262
Parameter
Max. Units
ID @ Tc = 25°C
Continuous Drain Current, Vas © -10V©
ID © Tc = 100°C
Continuous Drain Current, Vos © -10V(S)
Pulsed Drain Current C0(S)
PD @TA =25°C
Power Dissipation
Po @Tc = 25°C
Power Dissipation
Linear Derating Factor
0.53 WPC
Gate-to-Source Voltage
Single Pulse Avalanche Energy©(S)
250 tttl
Avalanche Current©
-8.4 A
Repetitive Avalanche Energy©
7.9 ml
Peak Diode Recovery dv/dt (3)6)
-5.0 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Res
istance
Parameter
Typ. Max. Units
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)"
- 40 CM
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04/26/05
IRF9530NS/LPbF International
TOR Rectifier
Electrical Characteristics tii) T,: = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vitsmoss Drain-to-Source Breakdown Voltage -100 - - V Vas = 0V, lo = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -O.11 - VPC Reference to 25°C, lo = -1rnA(S)
Rosiom Static Drain-to-Source On-Resistance - -.. 0.20 Q l/ss = -10V, lo = -8.4A ©
VGsun) Gale Threshold Voltage -2.0 - -4.0 V V05 = Vas, Io = -250uA
gps Forward Transconductance 3.2 - - S Vos = -50V, lo = -8.4AS
loss Drain-to-Source Leakage Current - - -25 PA Vos = -100V, Vos = 0V
- - -250 Vos = -80V, l/ss = 0V, T., = 150°C
Isss Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -1OO VGS = -20V
09 Total Gate Charge -....- - 58 lo = -8.4A
Qgs Gate-to-Source Charge - - 8.3 nC Vos = -80V
095 Gate-to-Drain ('Miller') Charge - - 32 Vas = -1OV. See Fig. 6 and 13 C9(S)
tam Tum-On Delay Time -.....- 15 - VDD = -50V
tr Rise Time - 58 - ns It) = -8.4A
Mom Turn-tyt Delay Time - 45 - R6 = 9.10
t. FallTime - 46 - Ro = 6.29. See Fig. 10 6)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Css Input Capacitance - 760 - l/tss = 0V
Cass Output Capacitance - 260 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current --. - -14 MOSFETsymbol "
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse c.
(Body Diode) cm - - -56 p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V Ts = 25''C, Is = -8.4A. Vas = 0V ©
trr Reverse Recovery Time - 130 190 ns Tu = 25°C, IF = -8.4A
G, Reverse Recovery Charge - 650 970 nC di/dt = -100/Vps (9(S)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+lo)
Notes:
CD Repetitive rating; pulse width limited by CD Pulse width I 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
C) Starting T J = 25°C, L =7.0mH © Uses IRF9530N data and test conditions
Rs = 250, IAS = -8.4A. (See Figure 12)
© Iso f. -8.4A, di/tit S M90A/ps, Voo f Viisnpss,
T J I 175°C
" When mounted on l" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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