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IRF9Z14S
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR, Rectifier
PD - 9.911A
IRF9Z14S/L
HEXFET6 Power MOSFET
Advanced Process Technology
Surface Mount (IRF9Z14S)
Low-profile through-hole (IRF9Z14L)
175°C Operating Temperature
Fast Switching G
P- Channel
o Fully Avalanche Rated
Description
VDSS = -60V
RDS(0n) = 0.509
ID = -6.7A
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z14L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ Tc = 25°C
Continuous Drain Current, VGS @ ION/S
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V6)
-4.7 A
Pulsed Drain Current C)6)
PD @TA = 25°C
Power Dissipation
PD @Tc = 25°C
Power Dissipation
Linear Derating Factor
0.29 W/°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©S
140 mJ
Avalanche Current0D
-6.7 A
Repetitive Avalanche Energyc0
4.3 mJ
Peak Diode Recovery dv/dt @©
-4.5 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Res
istance
Parameter
Typ. Max. U nits
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
- 40 CAN
8/25/97
IRF9Z14S/L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -60 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.06 - V/°C Reference to 25°C, ID =-1mAOD
RDs(on) Static Drain-to-Source On-Resistance - - 0.50 f2 VGs =-10V, ID = -4.0A (9
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 1.4 - - S VDs = -25V, ID = -4.0AS
Koss Drain-to-Source Leakage Current - - -100 pA l/os = -60V, VGS = 0V
- - -500 Vos = -48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - - 12 ID = -6.7A
Qgs Gate-to-Source Charge - - 3.8 nC VDS = -48V
di Gate-to-Drain ("Miller") Charge - - 5.1 VGS = -10V, See Fig. 6 and 13 C96)
tum) Turn-On Delay Time - 11 - VDD = -30V
tr Rise Time - 63 - ns ID = -6.7A
tum) Turn-Off Delay Time - 10 - R3 = 249
tf Fall Time - 31 - RD = 4.09, See Fig. 10 ©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 270 - VGS = 0V
Coss Output Capacitance - 170 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 31 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -6.7 A showing the H4
ISM Pulsed Source Current integral reverse G E
(Body Diode) OD - - -27 p-n junction diode. s
VSD Diode Forward Voltage - - -5.5 V Tu = 25°C, Is = -6.7A, VGS = 0V co
trr Reverse Recovery Time - 80 160 ns Tu = 25°C, IF = -6.7A
er Reverse Recovery Charge - 96 190 nC di/dt = 100A/ps CO(S)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = -25V, starting T J = 25°C, L = 3.6mH
Re: 250, IAS = -6.7A. (See Figure 12)
© ISD s -6.7A, di/dt s 90A/ps, VDD s V(BR)ross,
Tuf 175°C
** When mounted on l" square PCB (FR-4 or G-IO Material ).
© Pulse width 3 300ps; duty cycle s: 2%.
s Uses |RF9214 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
