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IRF9Z24IRN/a1250avai-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package


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IRF9Z24
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
1lnternatiitynall
142R Rectifier
PD-9.647A
IR F9224
HEXFET® Power MOSFET
o P-Channel
175°C Operating Temperature
Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-22O contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves © -10 V -11
lo © Tc = 100°C Continuous Drain Current, Vos © -10 V -7.7 A
IDM LPulsed Drain Current (D -44
Po @ To = 25°C Power Dissipation 60 W
Linear Derating Factor 0.40 WPC
Vos Gate-to-Source Voltage _ :20 V
EAS Single Pulse Avalanche Energy (2) 240 mJ
IAR Avalanche Current C) -11 A
EAR Repetitive Avalanche Energy co 6.0 mJ
dv/dt Peak Diode Recovery dv/dt co -4.5 V/ns
To Operating Junction and -55to +175
TSTG Storage Temperature Range <)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ROJA Junction-to-Ambient - 62 J
IRF9Z24
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -60 - - V VGs=0V, |D=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.056 - VPC Reference to 25°C, b=-1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.28 Q VGs=-1OV, b=-6.6A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, b=-250pA
gfs Forward Transconductance 1.4 - - S VDs=-25V, ID=~6.6A ©
loss Drain-to-Source Leakage Current - - -100 . pA 1/Ds=-60V, l/ss-HN
- - -500 Vps=-48V, Ves=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Vair=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Q, Total Gate Charge - - 19 ID=-11A
Qgs Gate-to-Source Charge - - 5.4 no Vrrs=-48V
di Gate-to-Drain ("Miller'') Charge - - 11 Vas=-10V See Fig. 6 and 13 ©
Mon) Turn-On Delay Time - 13 - VDD=-30V
tr Rise Time - 68 - ns b=-11A
td(off) Turn-Off Delay Time - 15 - RG=18£2
tf Fall Time - 29 - Rrr--2.5n See Figure 10 C9
Lo internal Drain Inductance - 4.5 - g aimefa 212: ') fig)
nH from package G ar,
Ls Internal Source Inductance - 7.5 - and center 6f :3
die contact s
Ciss Input Capacitance - 570 - Ves=0V
Coss Output Capacitance - 360 - pF Vmr=-25V
Chss Reverse Transfer Capacitance - 65 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Test Conditions
Is Continuous Source Current - - -1 1 MOSFET symbol D
(Body Diode) A showing the F39
Iss, Pulsed Source Current - - M4 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - -.. -6.3 V TJ=25°C, Is=-11A, VGs=0V ©
trr Reverse Recovery Time - 100 200 ns TJ=25°C, lF----11A
Qrr Reverse Recovery Charge - 0.32 0.64 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Ct) VDD=-25V, starting TJ=25°C, L=2.3mH
RGr25n, IAs=-11A (See Figure 12)
© ISDS-1 1A, di/dts140A/us, VDDSV(BH)Dss,
TJST 75°C
co Pulse width S 300 us; duty cycle 32%.
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