IC Phoenix
 
Home ›  II29 > IRFB13N50A,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFB13N50A Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFB13N50AIRN/a12000avai500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRFB13N50A ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D Switch Mode Power Supply (SMPS)500V 0.450 Ω 14A Uninterruptible ..
IRFB16N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications Switch Mode Power Supply (SMPS) HEXFET Power MOSFET Uninterruptible Power Supply ..
IRFB16N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 95855IRFB16N50KSMPS MOSFET
IRFB16N60L ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures and Benefits•          •    ..
IRFB17N20D ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.17Ω 16ABenefitsl Low Gate- ..
IRFB17N50L ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications Switch Mode Power Supply (SMPS)V R typ. I Uninterruptible Power SupplyDSS DS(on) D ..
ISL62882CHRTZ-T , Multiphase PWM Regulator for IMVP-6.5™ Mobile CPUs and GPUs
ISL62882HRTZ , Multiphase PWM Regulator for IMVP-6.5 Mobile CPUs and GPUs
ISL6291-1CR ,Li-ion/Li Polymer Linear Battery ChargerISL6291®Data Sheet November 2003 FN9102.1Li-ion/Li Polymer Linear Battery Charger
ISL6291-1CRZ , Li-ion/Li Polymer Linear Battery Charger
ISL62912CR ,Li-ion/Li Polymer Linear Battery ChargerFeaturesThe ISL6291 provides a low-cost integrated charger solution • Integrated Linear Pass Elemen ..
ISL6291-2CR ,Li-ion/Li Polymer Linear Battery ChargerISL6291®Data Sheet November 2003 FN9102.1Li-ion/Li Polymer Linear Battery Charger


IRFB13N50A
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
SMPS MOSFET
PD - 94339
|RFB13N50A
HEXFET® Power MOSFET
Applications
0 Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID
o Uninterruptible Power Supply 500V 0.450 n 14A
o High Speed Power Switching
Benefits
q Low Gate Charge Clg results in Simple Drive Requirement ',
q Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
q Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.1 A
G, Pulsed Drain Current C) 56
Pro @Tc = 25°C Power Dissipation 250 W
Linear Derating Factor 2.0 W/''C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt © 9.2 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 "C
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 560 mJ
IAR Avalanche CurrentC0 - 14 A
EAR Repetitive Avalanche Energy0) - 25 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.50
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
RNA Junction-to-Ambient - 62
1
12/10/01
IRFB13N50A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Vss = 0V, ID = 250PA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.55 - VI°C Reference to 25''C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.450 Q VGS = 10V, ID = 8.4A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Ves, ID = 250pA
Koss Drain-to-Source Leakage Current _- _- Ji, pA $3: -] 'eg', x2: =- g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 l/cs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 8.1 - - S Vos = 50V, ID = 8.4A
% Total Gate Charge - - 81 ID = 14A
095 Gate-to-Source Charge - - 20 n0 Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 36 VCs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 15 - VDD = 250V
tr Rise Time - 39 - ns ID = 14A
td(off) Turn-Off Delay Time - 39 - Rs = 7.59
tf Fall Time - 31 - Vss = 10V,See Fig. 10 ©
Ciss Input Capacitance - 1910 - VGS = 0V
Coss Output Capacitance - 290 - Vos = 25V
Crss Reverse Transfer Capacitance - 11 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2730 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
COSS Output Capacitance - 82 - I/ss = 0V, I/rss = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 160 - l/ss = 0V, Vos = 0V to 400V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 14A, VGS = 0V ©
trr Reverse Recovery Time - 370 550 ns TJ = 125°C, IF = 14A
Qrr Reverse RecoveryCharge - 4.4 6.5 PC di/dt = 100Alps ©
iRRM Reverse RecoveryCurrent - 21 31 A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L = 5.7mH, Re: 259,
lAs = 14A, dv/dt = 7.6V/ns. (See Figure 12a)
© ISD S 14A, di/dt S 250A/ps, VDD S V(BR)DSS,
TJs 150°C.
60 Pulse width 3 300ps; duty cycle f 2%.
Cs) Cass eff. is a foted capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% l/DSS

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED