IRFB3206PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications High Efficiency Synchronous RectificationDV 60VDSSin SMPSR typ.2.4m
IRFB3206PBF-IRFS3206-IRFS3206TRRPBF-IRFSL3206-IRFSL3206PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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ISER Rectifier |RFSL32®6PbF
Applications HEXFET® Power MOSFET
q High Efficiency Synchronous Rectification D Voss 60V
in SMPS
o Uninterruptible PowerSupply RDS(on) typ. A4mf2
0 High Speed Power Switching , A max. 3.0mn
o Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A co
Benefits s ID (Package Limited) 120A
o Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness 0,, D (iiiijiit
o Fully Characterized Capacitance and t, "gilt: (i4ii),t ' ,'it _
'R8(ii' 's., 'Rr'i"rl "-,
Avalanche SOA \ l, , s '"-, "s .
Enhanced body diode dV/dt and dI/dt Capability iD s GD T if s
Lead-Free
RoHS Compliant, Halogen-Free TO-220AB D2Pak TO-262
IRFB3206PbF IRFS3206PbF IRFSL3206PbF
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Farm Quantity
IRFB3206 PbF TO-220 Tu be 50 IRFB3206PbF
IRFSL3206PbF T0262 Tu be 50 IRFS L3206PbF
Tu be 50 IRFS3206PbF
IRFS3206PbF D2Pak Tape and Reel Left 800 IRFS3206TRLPbF
Tape and Reel Right 800 IRFS3206TRRPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) 210CO
ID @ Tc = 100°C Continuous Drain Current, vas © 10V (Silicon Limited) 15000 A
lo © TC = 25°C Continuous Drain Current, Vas @ 10V (Wire Bond Limited) 120
G, Pulsed Drain Current (2) 840
PD @TC = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Ves Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery Cl) 5.0 V/ns
T., Operating Junction and -55 to + 175
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb. in (IAN. m)
Avalanche Characteristics
E AS (Thermal limited) Single Pulse Avalanche Energy (3) 170 m]
|AR Avalanche Current <2) See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy CS) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case J2 - 0.50
' Case-to-Sink, Flat Greased Surface , TO-220 0.50 - ''C/W
FtajA Junction-to-Ambient, TO-220 <9) - 62
RNA Junction-to-Ambient (PCB Mount) , D2Pak I870) - 40
ll © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
ItiltitR,
Static © T,, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V Vos = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 5mA©
Roswn, Static Drain-to-Source On-Resistance - 2.4 3.0 mn Vss = 10V, ID = 75A s
I/asm Gate Threshold Voltage 2.0 - 4.0 V VDs = Vss, ID = 150PA
loss Drain-to-Source Leakage Current - - 20 pA Vos =60V, Vas = 0V
- - 250 Vos = 48V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vos = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Rs Internal Gate Resistance - 0.7 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 210 - - S VDS = 50V, ID = 75A
Qg Total Gate Charge - 120 170 nC ID = 75A
Qgs Gate-to-Source Charge - 29 - VDS =30V
di Gate-to-Drain ("Miller") Charge - 35 Vss = 10V ©
stnc Total Gate Charge Sync. (Q, - di) - 85 - ID = 75A, Vos =0V, I/ss = 10V
td(on) Turn-On Delay Time - 19 - ns VDD = 30V
t, Rise Time - 82 - ID = 75A
ton Turn-Off Delay Time - 55 - Re =2.7Q
t, Fall Time - 83 - Vas = 10V s
Ciss Input Capacitance - 6540 - pF Vas = 0V
Coss Output Capacitance - 720 - VDS = 50V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz, See Fig.5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 1040 - Vas = 0V, Vos = 0V to 48V CD, See Fig.11
Coss eff. (TR) Effective Output Capacitance (T ime Related)© - 1230 - Vss = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 21000 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 840 A integral reverse G
(Body Diode) oo p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 75A, l/ss = 0V s
trr Reverse Recovery Time - 33 50 ns T J = 25°C VR = 51V,
- 37 56 T, = 125°C IF = 75A
Q,, Reverse Recovery Charge - 41 62 nC TJ = 25°C di/dt = 100A/ps s
- 53 80 T J = 125°C
|RRM Reverse Recovery Current - 2.1 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © ISD S 75A, di/dt s 360A/ps, V00 f V(BR)Dss. TJ f 175°C.
temperature. Bond wire current limit is 120A. Note that current s Pulse width f 400ps; duty cycle S 2%.
limitations arising from heating of the device leads may occur with © Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as Coss while l/ns is rising from O to 80% Voss-
© Repetitive rating; pulse width limited by max. junction C) Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while Vos is rising from 0 to 80% Voss.
© Limited by TJmax, starting TJ = 25°C, L = 0.023mH When mounted on I" square PCB (FR-4 or G-10 Material). For recom
RG = 259, lAs = 120A, Ves =1OV. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. © Re is measured at Tu approximately 90°C
iil © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
