IRFB3207ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV 75VHigh Efficiency Synchronous Rectification in DSSR typ.SMPS 3.3m
IRFB3207Z-IRFB3207ZPBF-IRFSL3207ZPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
1:423 Rectifier
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I RF-38207ZPbF
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HEXFET® Power MOSFET
Applications
q High Efficiency Synchronous Rectification in D Voss 75V
SMPS RDS(on) typ. 3.3mQ
o Uninterruptible Power Supply max. 4.1mn
0 Hi h S eed Power Switchin G
g p . . g . . ID (Silicon Limited) 170AOD
q Hard Switched and High Frequency Circuits
s ID (Package Limited) 120A
Benefits
. Improved Gate, Avalanche and Dynamic D D D.
dv/dt Ruggedness l" l' ' (tiii),
. Fully Characterized Capacitance and ’73:- N, "tf/ii T:i,y,
Avalanche SOA "hr" l "a s tl, s 's, "s . E) S
0 Enhanced body diode dV/dt and dl/dt .. lo G G
Ca abilit
L pd-F y TO-22OAB D2Pak TO-262
. ea ree . IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF
o RoHSCompIIant,Halogen-Free
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB32072PbF TO-220 Tube 50 I RFB3207ZPbF
I RFSL32072PbF T0262 Tube 50 I RFSL3207ZPbF
Tube 50 I RFS3207ZPbF
IRFS32072PbF D2Pak Tape and Reel Left 800 lRFS3207ZTF1RPbF
Tape and Reel Right 800 IRFS3207ZTHLPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ls, © TC = 25°C Continuous Drain Current, VGS © 10V (Silicon Limited) 170L0
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 120® A
|D © TC = 25°C Continuous Drain Current, Vss © 10V (Wire Bond Limited) 120
IDM Pulsed Drain Current 2 670
Pro ©Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vas Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery Q) 16 V/ns
T J Operating Junction and -55 to + 175 °C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb. in (1.1N- m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy (3) 170 md
|AR Avalanche Current <2) See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy (SI m J
Thermal Resistance
Symbol Parameter Typ. Max. Units
Riuc Juncton-to-Case S) - 0.50
' Case-to-Sink, Flat Greased Surface , T0220 0.50 - °C/W
Rs), Junction-to-Ambient, TO-220 cg) - 62
Ram Juncton-to-Ambient (PCB Mount) , D2Pak (3197 - 40
fl © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
It,fp,iR,
Static @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
AmeDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.091 - V/°C Reference to 25°C, ID = 5mA©
RDs(on) Static Drain-to-Source On-Resistance - 3.3 4.1 mg I/ss = 10V, ID = 75A ©
Vesuh, Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
RGM Internal Gate Resistance - 0.80 - Q
|DSS Drain-to-Source Leakage Current - - 20 PA VDS = 75V, I/ss = 0V
- - 250 Vos = 75V, Vss = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 280 - - S Vos = 50V, ID = 75A
(A, Total Gate Charge - 120 170 nC ID = 75A
Qgs Gate-to-Source Charge - 27 - Vos = 38V
di Gate-to-Drain ("Miller") Charge - 33 - I/ss = 10V ©
stnc Total Gate Charge Sync. (Qg - di) - 87 - ID = 75A, Vos =0V, l/ss = 10V
tdmn, Turn-On Delay Time - 20 - ns VDD = 49V
t, Rise Time - 68 - ID = 75A
tom Turn-Off Delay Time - 55 - Rs = 2.79
t Fall Time - 68 - Vas = 10V s
Ciss Input Capacitance - 6920 - pF Vas = 0V
Coss Output Capacitance - 600 - VDS = 50V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related)(2 - 770 - Vas = 0V, VDS = 0V to 60V
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 960 - I/ss = 0V, N/ns = 0V to 60V co
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 170© A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 670 integral reverse (5
(Body Diode) ©© p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V s
t,, Reverse Recovery Time - 36 54 ns TJ = 25°C Vn = 64V,
- 41 62 Tu =125°C IF = 75A
ta,, Reverse Recovery Charge - 5O 75 n0 TJ = 25°C di/dt = 100A/ps co
- 67 100 T, = 125°C
|RRM Reverse Recovery Current - 2.4 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction GD Iso S 75A, di/dt I 1730A/ps, VDD S V(BR)DSSv Tu S 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
S Pulse width S 400ps; duty cycle S 2%.
© COSS eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0to 80% Voss.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.033mH
RG = 259, IAS = 102A, Ves =1OV. Part not recommended for use
above this value.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from O to 80% Voss-
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Rs is measured at Tu approximately 90°C.
© 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
