IRFB3306GPBF ,60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB packageApplicationsDV 60VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.3.3m
IRFB3306GPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
International
Tait Rectifier
PD - 96211
lRFl33306GPbF
HEXFETID Power MOSFET
APP!'°at'°.".s . . . . Voss 60V
o High Efficiency Synchronous Rectification In SMPS
o Uninterruptible Power Supply RDS(0n) typ. 3.3mf2
0 High Speed Power Switching max. 4.2mf2
Hard Switched and High Frequency Circuits ID (Silicon Limited) 160A co
Benefits Ir, (Package Limited) 120A
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness '
q Fully Characterized Capacitance and Avalanche t, "giiix
SOA 'R'ji(i',(" 'v.,
Enhanced body diode dV/dt and dI/dt Capability .“DS
Lead-Free G
Halogen-Free TO-220AB
IRFB3306GPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 16000
|D @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 1100D
ID © TC = 25°C Continuous Drain Current, Vas © 10V (Wire Bond Limited) 120 A
G, Pulsed Drain Current © 620
PD @Tc = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 14 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIbf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy (3 184 mJ
IAR Avalanche Current CD See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy (D md
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.65
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
RBJA Junction-to-Ambient, TO-220 - 62
1
01/06/09
IRFB3306GPbF
International
Static @ T, = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V Vas = 0V, ID = 250pA
AmeDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 5mAC8
RDSW, Static Drain-to-Source On-Resistance 3.3 4.2 m9 Vas = 10V, ID = 75A s
VGSM Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
IDSS Drain-to-Source Leakage Current - - 20 PA VDS = 60V, l/ss = 0V
- - 250 Vos = 48V, VGS = 0V, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vss = -20V
Rs Internal Gate Resistance - 0.7 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 230 - - S Vos = 50V, ID = 75A
q, Total Gate Charge - 85 120 nC ID = 75A
Qgs Gate-to-Source Charge - 20 - VDS =30V
di Gate-to-Drain ("Miller") Charge - 26 Vas = 10V s
stnc Total Gate Charge Sync. (Qg - di) - 59 - ID = 75A, Vos =0V, Vas = 10V
tom Turn-On Delay Time - 15 - ns Va, = 30V
t, Rise Time - 76 - ID = 75A
tdmm Turn-Off Delay Time - 40 - Ra = 2.79
t, Fall Time - 77 - Vss = 10V ©
Ciss Input Capacitance - 4520 - pF Vas = 0V
Coss Output Capacitance - 500 - VDS = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 720 - Vas = 0V, I/os = 0V to 48V C), See Fig. 11
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 880 - Vas = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1600) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 620 A integral reverse G
(Body Diode) C) p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V CO
tr, Reverse Recovery Time - 31 ns TJ = 25°C l/n = 51V,
- 35 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 34 nC TJ = 25°C di/dt = 100/Vps ©
- 45 T J = 125°C
IRRM Reverse Recovery Current - 1.9 - A T J = 25°C
tim Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © ISD I 75A, di/dt s 1400A/ps, VDD S V(BR)DSS, To f 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
(S) Pulse width 3 400ps; duty cycle 5 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from O to 80% Vass.
C) Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
© Limited by TJmax, starting TJ = 25°C, L = 0.04mH
Rs = 259, MS = 96A, Vas =10V. Part not recommended for use
above this value.
Coss while VDS is rising from O to 80% Voss.
Rs is measured at Tu approximately 90°C
