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IRFB33N15D-IRFS33N15D-IRFS33N15DTRL
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 93903
International IRFB33N15D
Tait Rectifier SMPS MOSFET IRFS33N15D
IRFSL33N'15D
HEXFET© Power MOSFET
Applications
V R max I
. High frequency DC-DC converters DSS DS(on) D
150V 0.0569 33A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including ' ' 'tspit
Effective Coss to Simplify Design, (See v "hili)dt''tf "
App. Note AN1001) u. I.
0 Fully Characterized Avalanche Voltage I.
and Current TO-220AB D2Pak TO-262
IRFB33N15D IRFS33N15D IRFSL33N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, Ves @ 10V 33
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 24 A
IDM Pulsed Drain Current C) 130
Pro @TA = 25''C Power Dissipation © 3.8 W
Pro @Tc = 25°C Power Dissipation 170
Linear Derating Factor 1.1 Wl°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 4.4 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1 .6mm from case )
Mounting torqe, 6-32 or M3 screw© IO Ibf-in (1.1N-m)
Typical SMPS Topologies
0 Telecom 48V input Active Clamp Forward Converter
Notes C) through © are on page 11
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IRFB/IRFS/IRFSL33N15D International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.18 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.056 n VGs = 10V, ID = 20A ©
VGSW Gate Threshold Voltage 3.0 - 5.5 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, VGS = 0V
- - 250 VDS = 120V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 14 - - S Vos = 50V, ID = 20A
09 Total Gate Charge - 60 90 ID = 20A
Qgs Gate-to-Source Charge - 17 26 nC Ws = 120V
di Gate-to-Drain ("Miller") Charge - 27 41 Vss = 10V, ©©
tam”) Turn-On Delay Time - 13 - VDD = 75V
tr Rise Time - 38 - ns ID = 20A
tum) Turn-Off Delay Time .- 23 .- Rs = 3.69
if Fall Time - 21 - N/ss = 10V§2 @
Ciss Input Capacitance - 2020 - N/ss = 0V
Coss Output Capacitance - 400 - VDS = 25V
Crss Reverse Transfer Capacitance - 91 - pF I = 1.0MHz©
Coss Output Capacitance - 2440 - Veg = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - VGS = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 320 - N/ss = 0V, Vos = 0V to 120V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 330 mJ
IAR Avalanche Current0) - 20 A
EAR Repetitive Avalanche Energy© - 17 m]
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 33 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 130 integral reverse G
(Body Diode) (DO) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 20A, VGs = 0V ©
trr Reverse Recovery Time - 150 - ns TJ = 25°C, IF = 20A
Qrr Reverse RecoveryCharge - 920 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
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