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IRFB4310GIR N/a1400avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free package


IRFB4310G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
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IRFB4310G
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 96190
lRFl34310GPbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply
0 High Speed Power Switching Voss 100V
0 Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mf2
max. 7.0mf2
Benefits '0 130A
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
q Fully Characterized Capacitance and Avalanche ,.
SOA "t1ifjl':',c'
Enhanced body diode dV/dt and dl/dt Capability I, ‘--- .
Lead-Free V . q bs
Halogen-Free G
TO-220AB
IRFB4310GPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss © 10V 13000
Ir) @ Tc = 100°C Continuous Drain Current, Vas @ 10V 920D A
low: Pulsed Drain Current © 550
Pro @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vas Gate-to-Source Voltage i 20 V
dV/dt Peak Diode Recovery Ci) 14 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range 0 C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS fThermallylimite0) Single Pulse Avalanche Energy (3 980 mJ
IAR Avalanche Current CO See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RSJC Junction-to-Case - 0.50
R903 Case-to-Sink, Flat Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient (8)@ - 62
1
10/15/08

IRFB4310GPbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.064 - V/°C Reference to 25°C, ID = 1mA©
Roam) Static Drain-to-Source On-Resistance - 5.6 7.0 mg Vas = 10V, ID = 75A s
VGSM Gate Threshold Voltage 2.0 - 4.0 V VDS = I/as, ID = 250pA
IDSS Drain-to-Source Leakage Current - - 20 pA Nhos = 100V, Vas = 0V
- - 250 Vos = 100V, l/ss = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Rs Gate Input Resistance - 1.4 - Q f = 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 75A
Q, Total Gate Charge - 170 250 nC ID = 75A
Qgs Gate-to-Source Charge - 46 - VDS = 80V
di Gate-to-Drain ("Miller") Charge - 62 - Vas = 10V s
tion) Turn-On Delay Time - 26 - ns VDD = 65V
t, Rise Time - 110 - ID = 75A
ton Turn-Off Delay Time - 68 - Rs = 2.69
tr Fall Time - 78 - Vas = 10V s
Cess Input Capacitance - 7670 - pF Vss = 0V
Coss Output Capacitance - 540 - Vos = 50V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)C - 650 - Vas = 0V, Vos = 0V to 80V CD, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 720.1 - Vss = OV, Vos = 0V to 80V CO, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 130C0 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 550 integral reverse G
(Body Diode) oo p-n junction diode. 5
Van Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vas = 0V ©
trr Reverse Recovery Time - 45 68 ns T J = 25°C VR = 85V,
- 55 83 T, = 125°C IF = 75A
0,, Reverse Recovery Charge - 82 120 nC TJ = 25°C di/dt = 100NUS G)
- 120 180 TJ=125°C
IRRM Reverse Recovery Current - 3.3 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A as Coss while VDs is rising from 0 to 80% Voss.
© Repetitive rating; pulse width limited by max. junction © Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while l/os is rising from O to 80% Voss.
© Limited by TJmax, starting Tu = 25°C, L = 0.35mH When mounted on 1" square PCB (FR-4 or G-10 Material). For
Rs = 25Q, IAS; = 75A, Vas =10V. Part not recommended for use recommended footprint and soldering techniques refer to
above this value. application note #AN-994.
(9 ISDS 75A, di/dt f 550A/ps, VDDS V(BR)DSS: Tos 175°C. © Ro is measured atTo approximately 90°C.
© Pulse width S 400ps; duty cycle S 2%.
2

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