IRFB4310ZGPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.4.8m
IRFB4310ZGPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free package
International
Tait Rectifier
PD - 96189
IRFl34310ZGPbF
HEXFETID Power MOSFET
ArP.lta.tlTt .-. . . Voss 100V
o High Efficiency Synchronous Rectification In SMPS
o Uninterruptible Power Supply RDSWI) typ. 4.8mQ
. High Speed Power Switching max. 6.0mQ
Hard Switched and High Frequency Circuits ID (Silicon Limited) 127A co
Benefits Ir, (Package Limited) 120A
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness 0,,
q Fully Characterized Capacitance and Avalanche t, 'gilt:
SOA \f‘k 's.,
Enhanced body diode dV/dt and dI/dt Capability V .‘bs
Lead-Free G
Halogen-Free TO-220AB
IRFB4310ZGPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
lr, @ To = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) 1270D
|D @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 900)
ID @ To = 25°C Continuous Drain Current, Vas @ 10V(Wire Bond Limited) 120 A
lm, Pulsed Drain Current © 560
PD @Tc = 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.7 W/°C
Vss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery GD 18 V/ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy © 130 mJ
IAR Avalanche Current C) See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rus Junction-to-Case - 0.6
Recs Case-to-Sink, Flat Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient (IMO - 62
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10/15/08
IRFB4310ZGPbF International
Static @ T, = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AVmFODSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 5mA©
RDS(0n, Static Drain-to-Source On-Resistance - 4.8 6.0 m9 Vas = 10V, ID = 75A s
VGSM Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
|Dss Drain-to-Source Leakage Current - - 20 pA VDS = 100V, Vss = 0V
- - 250 Vos = 80V, l/tss = 0V, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Rs Internal Gate Resistance - 0.7 - Q
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 - - S Vos = 50V, ID = 75A
A Total Gate Charge - 120 170 nC ID = 75A
Qgs Gate-to-Source Charge - 29 - l/ns =50V
di Gate-to-Drain ("Miller") Charge - 35 Vas = 10V s
stnc Total Gate Charge Sync. (Qg - di) - 85 - ID = 75A, Vos =0V, Vas = 10V
tam) Turn-On Delay Time - 20 - ns Va, = 65V
t, Rise Time - 60 - ID = 75A
tion Turn-Off Delay Time - 55 - Ra = 2.79
t Fall Time - 57 - Vss = 10V s
Ciss Input Capacitance - 6860 - pF Vas = 0V
COSS Output Capacitance - 490 - VDS = 50V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 570 - Vas = 0V, Vos = 0V to 80V C), See Fig. 11
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 920 - Vas = 0V, Vos = 0V to 80V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1270D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 560 A integral reverse G
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, l/ss = 0V S
trr Reverse Recovery Time - 40 ns T J = 25°C VR = 85V,
- 49 TJ = 125°C IF = 75A
Qrr Reverse Recovery Charge - 58 no T J = 25°C di/dt = 100A/ps ©
- 89 T J = 125°C
|RRM Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction co Pulse width 3 400ps; duty cycle S 2%.
temperature. Bond wire current limit is 120A. Note that current © Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with as Coss while VDs is rising from o to 80% VDSS-
some lead mounting arrangements. © Cass eff. (ER) is a fixed capacitance that gives the same energy as
Q) Repetitive rating; pulse width limited by max. junction Coss while VDS is rising from o to 80% Voss.
temperature. When mounted on 1" square PCB (FR-4 or G-10 Material). For
6) Limited by TJmax, starting TJ = 25''C, L = 0.047mH recommended footprint and soldering techniques refer to
Re = 259, lAs = 75A, Vas =10V. Part not recommended for use application note #AN-994.
above the Eas value and test conditions. © R0 is measured at Tu approximately 9000'
GD ISD s: 75A, di/dt s 600A/us, VDD s V(Bmss, TJ 3 175°C.
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