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IRFB4410ZPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
152R Rectifier
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|RFS441l®ZPbF
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Applications
HEXFET® Power MOSFET
. . . . . . . D
o High Efficiency Synchronous Rectification In SMPS VDSS 100V
q Uninterruptible Power Supply
. . . Rosen typ. 7.2mo
0 High Speed Power Switching
o Hard Switched and High Frequency Circuits G man 9.0mQ
. s k, (Silicon United) 97A
Benefits
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness D,. D
. Fully Characterized Capacitance and Avalanche "ifjj)-t (i4ii),)
SOA r, 's., Rfi"ti, S '. .
Enhanced body diode dV/dt and dI/dt Capability .' bs l, GD T 2; DS
Lead-Free G
RoHS Compliant, Halogen-Free TO-i/NB D2Pak TO-262
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
I RFB44102PbF TO-220 Tu be 50 I RFB441 OZPbF
IRFSL44102PbF TO-262 Tube 50 IRFSL4410ZPbF
Tu be 50 I RFS441 OZPbF
IRFS44102PbF D2Pak Tape and Reel Left 800 IRFS4410ZTRLPbF
Tape and Reel Right 800 IRFS441OZTRRPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
lo © TC = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 97
ID © To = 100°C Continuous Drain Current, VGS © 10V (Silicon Limited) 69 A
Irv, Pulsed Drain Current C) 390
Pro @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
Ves Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery <3) 16 V/ns
T J Operating Junction and -55 to + 175 "C
Tsro Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1 .6mm from case)
Mounting torque, 6-32 or M3 screw 10lty in (MN m)
Avalanche Characteristics
E AS (Thermally Jimited) Single Pulse Avalanche Energy <2) 242 mJ
|AR Avalanche Current See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy Cf) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rau, Junction-to-Case (Lr) - 0.65
Recs Case-to-Sink, Flat Greased Surface ,TO-220 0.50 - °CNV
F1aJA Junction-to-Ambient, TO-220 (8) - 62
Ram Junction-to-Ambient (PCB Mount) , D2Pak Ct)OT - 40
fl © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
ESHZR |RFB441I1J1IOZPbF/IRFS44OZPbF/IRFSL44OZPbF
Static @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/as = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 5mA©
RDs(on) Static Drain-to-Source On-Resistance - 7.2 9.0 m9 Vss = 10V, ID = 58A Ci)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
IDSS Drain-to-Source Leakage Current - - 20 pA VDs = 100V, Vas = 0V
- - 250 vDS = 80V, Vss = ov, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/as = -20V
Rs Internal Gate Resistance - 0.70 - n
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 140 - - S Vos = 10V, ID = 58A
a, Total Gate Charge - 83 120 nC ID = 58A
Qgs Gate-to-Source Charge - 19 - VDs =50V
di Gate-to-Drain ("Miller") Charge - 27 Vss = 10V Ci)
stnc Total Gate Charge Sync. (Qg - Ogd) - 56 - ID = 58A, I/cs =OV, Vas = 10V Ci)
tdion) Turn-On Delay Time - 16 - ns VDD = 65V
t, Rise Time - 52 - ID = 58A
td(off) Turn-Off Delay Time - 43 - Rs =2.7Q
t; Fall Time - 57 - l/as = 10V GD
Ciss Input Capacitance - 4820 - pF I/ss = 0V
Coss Output Capacitance - 340 - Vos = 50V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig.5
Coss eff. (ER) Effective Output Capacitance (Energy Related) © - 420 - Vas = 0V, VDS = 0V to 80V 6), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 690 - I/ss = 0V, VDs = 0V to 80V (9
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 97 A MOSFET symbol D
(Body Diode) showing the
Iss, Pulsed Source Current - - 390 A integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 58A, Vas = 0V co
trr Reverse Recovery Time - 38 57 ns TJ = 25°C VR = 85V,
- 46 69 TJ = 125°C IF = 58A
Qrr Reverse Recovery Charge - 53 80 nC To = 25°C di/dt = 100A/ps (ii)
- 82 120 TJ = 125°C
|an Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by max. junction S Cass eff. (TR) is a fixed capacitance that gives the same charging time
temperature. as COSS while Vos is rising from 0 to 80% Voss.
© Limited by TJmax, starting TJ = 25°C, L = 0.143mH
Re = 259, IAS = 58A, VGS =10V. Part not recommended for use
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss.
above this value. © When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
© ISD I 58A, di/dt S 610A/ps, VDDS V(BR)DSS: T, S 175°C. mended footprint and soldering techniques refer to application note #AN-994.
(9 Pulse width S 400ps; duty cycle f 2%. Ro is measured at Tu approximately 90°C.
lil © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
