IC Phoenix
 
Home ›  II30 > IRFBE30L-IRFBE30S,800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRFBE30L-IRFBE30S Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFBE30LIRN/a100avai800V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRFBE30SIRN/a4800avai800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRFBE30S ,800V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94694IRFBE30SIRFBE30L®HEXFET Power MOSFETO Dynamic dv/dt RatingO Repetitive Avalanche RatedDO ..
IRFBE30SPBF , HEXFET Power MOSFET
IRFBF20 ,900V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternati onal 192R Rectifier PD-9.607A IRFBF20 HEXFETO Power MOSFET . Dynamic dv ..
IRFBF20. ,900V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low thermal resistance and ..
IRFBF20L ,900V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFBF20S ,900V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1665IRFBF20S/LPRELIMINARY®HEXFET Power MOSFETl Surface Mount (IRFBF20S)Dl Low-profile throug ..
ISL6327IRZ , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6327IRZ-T , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6329 ,Dual PWM Controller Powering AMD SVI Split-Plane Processorsfeatures a multiphase controller to support the Core - 3,4,5 or 6-Phase Operation with External PWM ..
ISL6329CRZ , Dual PWM Controller Powering AMD SVI Split-Plane Processors
ISL6333ACRZ , Three-Phase Buck PWM Controller with Integrated MOSFET Drivers and Light Load Efficiency Enhancements for Intel VR11.1 Applications
ISL6333CRZ , Three-Phase Buck PWM Controller with Integrated MOSFET Drivers and Light Load Efficiency Enhancements for Intel VR11.1 Applications


IRFBE30L-IRFBE30S
800V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94694
International
TOR Rectifier IRFBE3OS
. Dynamic dv/dt Rating HEXFET Power MOSFET
o Repetitive Avalanche Rated D
o Fast Switching VDSS = 800V
o Ease of Paralleling
. Sim Ie Drive Re uirements -
p q - A RDS(on) - 3.09
ID = 4.1A
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best . I 4f)
combination offastswitching, ruggedized device "itti'ji) -
. . . ' xv
design, low on-resistance and cost-effectiveness. E, l,
D2Pak TO-262
IRFBE30S IRFBE30L
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 4.1 A
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 2.6
IDM Pulsed Drain Current C) 16
Po @Tc = 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 260 m]
IAR Avalanche Current C) 4.1 A
EAR Repetitive Avalanche Energy C) 13 m J
dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
To Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Roc Junction-to-Case - - 1.0 "C/W
Rocs Case-to-Sink, Flat, Greased Surface - 0.50 -
ROJA Junction-to-Ambient - - 62
1
06/1 1/03
IRFBE30S/lRFBE30L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 800 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.90 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.0 Q VGS = 10V, ID = 2.5A (9
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, b = 250pA
gfs Forward Transconductance 2.5 - - S Vos = 100V, b = 2.5A
loss Drain-to-Source Leakage Current - - 100 pA Vos = 800V, I/ss = 0V
- - 500 Vos = 640V, I/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
Q, Total Gate Charge - - 78 nC ID = 4.1A
Qgs Gate-to-Source Charge - - 9.6 Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 45 I/ss = 10V, See Fig. 6 & 13 ©
td(on) Turn-On Delay Time - 12 - VDD = 400V
t, Rise Time - 33 - ns ID = 4.1A
tom Turn-Off Delay Time - 82 - Rs = 129
t, Fall Time - 30 - RD = 959, See Fig. 10 C)
Lo Internal Drain Inductance -- 4.5 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1300 - VGS = 0V
Coss Output Capacitance - 310 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 4.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 16 integral reverse G
(Body Diode) G) p-n junction diode. S
l/sro Diode Forward Voltage - - 1.8 V TJ = 25°C, Is = 4.1A, VGS = 0V ©
trr Reverse Recovery Time - 480 720 ns TJ = 25°C, IF = 4.1A
Q,, Reverse Recovery Charge - 1.8 2.7 nC di/dt = 100/Ups C9
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© VDD=50V, starting TJ = 25°C, L=29mH, Rs=25Q,
lAs = 4.1A. (See Figure 12).
© ISD s 4.1A, di/dt s 100A/ps, VDD s 600,
To S1500C.
© Pulse width s: 300ps; duty cycle 3 2%.

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED