IRFBG30 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
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Absolute Maximum Ratings
TO-220AB
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IRFBG30
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Interior''.!,",!'
192R Rectifier
HEXFET® Power MOSFET
PD-9.620A
IRFBGSO
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
o Ease of Paralleling
o Simple Drive Requirements
D VDSS = 1000V
RDS(on) ,'l.= 5.09
S Ir) = 3.1A
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vss © 10 V 3.1
In © To = 100°C Continuous Drain Current, Ves @ 10 V 2.0 A
IDM Pulsed Drain Current 6) 12
Po © To = 25°C Power Dissipation _ 125 W
Linear Derating Factor 1.0 W/°C
Vss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy (2) 280 md
IAR Avalanche Current co 3.1 A
EAR Repetitive Avalanche Energy co 13 mJ
dv/dt Peak Diode Recovery dv/dt © 1.0 V/ns
To Operating Junction and -55 to +150
Tsra Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibfoin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Fhuc Junction-to-Case - - 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RBJA Junction-to-Ambient - - 62
IRFBG30
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 1000 - - V Ves=DV, kr-- 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. COefficient - 1.4 - VPC Reference'to 25°C, lo: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 5.0 Q Ves=1OV, |D=1.9A C4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, lo: 250%
grs Forward Transconductance 2.1 - - S Vos=100V, lo=1.9A ©
. - - 100 VDs=1000V, Vss=OV
loss Drain-to-Source Leakage Current - - 500 ptA Vos=800V, Ves=0V. TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
th Total Gate Charge - - 80 lo=3.1A
Qgs Gate-to-Source Charge - - 1O nC VDs=4OOV
di Gate-to-Drain (''Miller") Charge - - 42 VGs=10V See Fig. 6 and 13 G)
td(on) Turn-On Delay Time - 12 - Voo=500V
tr Rise Time - 25 - n s Iro=3.1 A
td(om Turn-Off Delay Time 7 - 89 - Re=12n
t: Fall Time - 29 - Rrr=170n See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttr11eT.ltiei.; (ii)
nH from package G
Ls Internal Sourcé Inductance - 7.5 - Ind center 6f
die contact s
Ciss Input Capacitance - 980 - Ves=0V
Cass Output Capacitance - 140 - pF Vos=25V
Crss Reverse Transfer Capacitance .._ 50 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 1 MOSFET symbol D
(Body Diode) . A showing the 'rc,-,,--'-:
ISM Pulsed Source Current - - 12 integral reverse G (trl
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=3.1A, VGs=0V (Ci)
tn Reverse Recovery Time - 410 620 ns TJ=25°C, IF=3.1A
G, Reverse Recovery Charge - 1.3 2.0 “C di/dt=100A/ps (ii)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
2 VDD=50V. starting TJ=25°C, L=55mH
RG=25§2, |As=3.1A (See Figure 12)
TJS150°C
© ISDSBJA, di/dts80A/ws, VDDSBOO ,
co Pulse width s: 300 ps; duty cycle 32%.
