IRFD9014 ,-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP packageIntet'r_aatipt?al
EOR Rectifier
PD-9.696A
|RFD9014
HEXFET® Power MOSFET
q Dynamic dv/d ..
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EOR Rectifier
PD-9.696A
|RFD9014
HEXFET® Power MOSFET
q Dynamic dv/d ..
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IRFD9014
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
krttettr,yatiip,tal
EOR Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
P-Channel
It 175°C Operating Temperature
o Fast Switching
PD-9.696A
IRFD9014
D VDSS = A30V
RDS(on) = 0.509
S ID = -1.1A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1' inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt."
Absolute Maximum Ratings
Parameter Max, Units
ID © Tc = 25°C Continuous Drain Current, Vas © ~10 v -1.1 l
lo @ Tc = 100°C Continuous Drain Current, I/ss @ -10 V -0.80 A
IDM Pulsed Draih Current 6) -8.8
Po © Tc = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Purse Avalanche Energy © 140 ml
un Avalanche Current co -1.1 A
EAR Repetitive Avalanche Energy (O 0.13 md
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rem Junction-to-Ambient - 120 oC/W
lRFD9014
Electrical Characteristics ti) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(an)oss Drain-to-Source Breakdown Voltage -60 - - V VGs=0V, |o=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.060 - VPC Reference to 25°C, |n=-1mA
Roam) Static Drain-to-Source On-Resistance - - 0.50 n VGs=-10V, ID=-0.66A ©
VGS(lh) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, ky=-250WA
gts _ Forward Transconductance 0.70 - -.. S Vos=-25V, |o=-0.66A ©
loss Drain-to-Source Leakage Current - - .100 uA VDS=-60V' VGS=OV
-- - -500 Vos=-48V, 1/tss=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
th Total Gate Charge - - 12 b=-6.7A
Qgs Gate-fo-Source Charge - - 3.8 nC VDs=-48V
tho Gate-to-Drain ("Miller") Charge -- - 5.1 VGs=-10\_/ See Fig, 6 and 13 ©
tum) Turn-On Delay Time - 11 - VDD=-30V
tr Rise Time - 63 - n s lo=-6.7A
tam“) Turn-Off Delay Time - 10 - Ra---24n
tf Fall Time - 31 - RD=4.0§2 See Figure 10 (g)
Lo Internal Drain inductance - 4.0 -.'. ttit1(rlon.ltitnd.') c1ii
nH from package il/i-ii)
Ls Internal Source Inductance -..r. 6.0 - and center. df ,
die contact s
Ciss Input Capacitance - 270 - Ves=0V
Cass Output Capacitance - 170 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 31 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -1 1 MOSFET symbol D
(Body Diode) . A showing the L,-,,,,
ISM Pulsed Source Current - - 48 8 integrai reverse G :3.
(Body Diode) G) . p-n junction diode. s
Va, Diode Forward Voltage - -- -5.5 v Tr--25oC, ls=-1.1A, l/oss-IN ©
trr Reverse Recovery Time - 80 160 ns TJ=25°C, h:=-6.7A
Chr Reverse Recovery Charge - 0.096 0.19 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by,
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=33mH
Rtr=25t2, |As=-2.2A (See Figure 12)
O) lsoS-6.7A, di/dtec90A/ws, VDDSV(BR)Dss,
TJS175°C
© Pulse width s: 300 us; duty cycle 32%.
