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PD-9.387H
lRFD9210
. Dynamic dv/dt Ra ..
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IRFD9210
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
mtennati
Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt
Repetitive Avalanche Rated
o For Automatic
0 End Stackable
o P-Channel
o Fast Switching
Ease of Paralleling
Description
The HEXFET technology is the key to International Rectifier's advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with '
PD-9.387H
llRFD9210
Rating
Insertion
Voss Td". -200V
RDS(on) = 3.09
ID 'CT. -0.40A
high transconductance and extreme device ruggedness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGs @ -10 V -0.40
lo o To = 100°C Continuous Drain Current, Vas @ -10 V -0.25 A
IDM Pulsed Drain Current (i) -3.2
PD @ To = 25°C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 210 md
IAR Avalanche Current C) -0.40 A
EAR Repetitive Avalanche Energy C) 0.10 md
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range oc)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Min. Typ. Max. Units
Junction-to-Ambient
- - 120 °C/W
IRFD9210 .
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -200 - - V VGs=OV, b=-250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.23 - VPC Reference to 25°C, Iry.---1mA
Roam) Static Drain-to-Source On-Resistance - - 3.0 n VGs=-10V, b---0.24A ©
VGS(th) Gate-Threshold Voltage -2.0 - -4.0 V Vos=Vss, ID=-250uA
ggs Forward Transconductance 0.27 - - S VDs=-50V, lo=-0.24A ©
loss Drain-to-Source Leakage Current _ - -100 pA Vos=-200V, VGSFOV
- - -500 l/tss.---), Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
ch Total Gate Charge - - 8.9 lrr=-1.3A
Qgs Gate-to-Source Charge - - 2.1 I Vos=-160V
di Gate-to-Drain (''Miller") Charge - - 3.9 VGs=-1OV See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 8.0 - VDD=-100V
tr Rise Time - 12 - ns ID=-2.3A
td(off) Turn-Off Delay Time - 1 1 - Re=24£2
t: Fall Time - 13 - RD=41Q See Figure 10 C4)
Ln Internal Drain Inductance - 4.0 - 2:21:83 $95,713 ') é
_ nH from package tiiiiii',)
Ls Internal Source Inductance - 6.0 - Ind center 6f
die contact s
Ciss Input Capacitance - 170 - Ves=0V
Coss Output Capacitance - 54 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 16 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -0. 40 MOSFET symbol D
(Body Diode) A showing the 'ii-ir-:-'-)
IsM Pulsed Source Current - - -3 2 integral reverse oiiii--i-_,-r),,
(Body Diode) (D . p-n junction diode. S
VSD Diode Forward Voltage - - -5.8 v 132299 Is=-0.40A, VGS=0V
trr Reverse Recovery Time - 110 220 ns Tr=25oC, lF=-2.3A
G, Reverse Recovery Charge - 0.56 1.1 pc di/dt=100A/ps ©
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=123mH
RG=259, lAs=-1.6A (See Figure 12)
TJS150°C
© lsps-2.3A, di/dts70A/ps, VDDSV(BR)DSS,
© Pulse width 3 300 us; duty cycle 32%.
