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IRFD9220IORN/a710avai-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
IRFD9220IRN/a5000avai-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package


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IRFD9220
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
rtletiatiitt,t,i,yd
1:212 Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
0 For Automatic insertion
PD-9.439C
IRFD9220
o End Stackable
o P-Channel
Fast Switching
o Ease of Paralleling
Description
The HEXFET technology is the key to international Rectifier's advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
D I/oss - -2001/
RDS(on) = 1.59
s ID = -0.56A
high transconductance and extreme device ruggedness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
T Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Ves @ -10 V -0.56
lo @ To = 100°C Continuous Drain Current, Ves © -10 V -0.36 A
IDM Pulsed Drain Current CD - -4.5
Po @ Tc = 25°C Power Dissipation 1.0 W
. Linear Derating Factor 0.0083 WPC
Vas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy (2) 420 mJ
IAFI Avalanche Current Ci) -O.56 A
EAR Repetitive Avalanche Energy OD 0.10 ml
dv/dt Peak Diode Recovery dv/dt Q) -5,0 V/ns
TJ Operating Junction and -55 to +150
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Min. Typ. Max.
- ynits
Junction-to-Ambient
- - 120
lRFD9220
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BFI)DSS Drain-to-Source Breakdown Voltage -200 - _ - V Veszov, |D=~250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.22 - NPC; Reference to 25°C, ky=-1m/k
Roam) Static Drain-to-Source On-Resistance - - 1.5 n Ves=-10V, |D=-0.34A ©
VGs(m) Gate Threshold Voltage -2.0 - -4.0 V VDs=Vgs, |o=-25OLLA
gls Forward Transconductance 0.55 - - S Vosz-SOV, lrr-u--0.35A (ii)
loss Drain-to-Source Leakage Current - - -100 p1A 1hos=-200V, Vss=0V
- - -500 Vos=-160V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
th Total Gate Charge - - 15 irr=-2.IA
Qgs Gate-to-Source Charge - - 3.2 nC VDs=-160V
di Gate-to-Drain ("Miller0 Charge - - 8.4 VGs=-10V See Fig. 6 and 13 ©
tum) Tum-On Delay Time - 8.8 - _ Vnoz-1OOV
tr Rise Time - 27 - ns ID=-3.9A
tum) Tum-Off Delay Time - 7.3 - Re=18§2
tt Fall Time - 19 - RD=24Q See Figure 10 co
Lo Internal Drain Inductance -.-.... 4.0 - 23311929343) D
nH from package GE
Ls Internal Source Inductance - 6.0 - and center 6f Ft;
die contact s
Ciss Input Capacitance - 340 - VGs=0V
Coss Output Capacitance - 1 10 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 33 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
ls Continuous Source Current - - -0 56 MOSFET symbol D
(Body Diode) . A showing the rr.,-,
ISM Pulsed Source Current - - -4.5 integral reverse G :3;
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V 3:250 ls=-0.56A, Vas=OV
trr Reverse Recovery Time - 150 300 ns TJ=250C, |F=-3.9A
er Reverse Recovery Charge - 0.97 2.0 110 di/dt=100A/ws Cs)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=130mH
Re=25f2, IAS=-2.2A (See Figure 12)
TJS1 50°C
© lsDsi-3.9A, di/dts95A/ps, VDDSV(BR)DSS,
© Pulse width I: 300 ps; duty cycle 52%.
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