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IRFH5015TRPBF
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
222R Rectifier fIiimliIEiylandiir
HEXFET© Power MOSFET
Vos 150 V
RDS(on) max - U - FFV, i' i' 4:::(i.ijtp.
31 mn 3 _,': __. _. iCu. od
(@Vss =10V) 'se "s,.
th, (typical) 36 nC f
R 1 Rte,
G (typical) .7 "sl'
ID 44 A PQFN 5X6 mm
(@Tmb = 25°C)
Applications
q Primary Side Synchronous Rectification
q Inverters for DC Motors
q DC-DC BrickApplications
o BoostConverters
Features and Benefits
Features Benefits
Low RDSon (< 31 m9) Lower Conduction Losses
Low Thermal Resistance to PCB (<0.8°C/W) Increased Power Density
100% Rg tested Increased Reliability
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout => Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFH5015PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5015TRPBF
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 150 V
Vas Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 10
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 8.2
ID @ Tu-- 25°C Continuous Drain Current, Vss @ 10V 44 A
ID @ Tmb= 100°C Continuous Drain Current, Vas @ 10V 28
los, Pulsed Drain Current C) 220
PD @TA = 25°C Power Dissipation S 3.6 W
PD @ Tmt, = 25°C Power Dissipation © 156
Linear Derating Factor G) 0.029 W/°C
T, Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes co through s are on page 8
il © 2013 International Rectifier September 6, 2013
Itf,ll) 1f1lAh'ltrGllWW'
(iiihiR,
Static Iii) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 150 - - V I/ss = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1.0mA
Rosm) Static Drain-to-Source On-Resistance - 25.5 31 mg; Vas = 10V, ID = 34A 6)
Vesoh) Gate Threshold Voltage . . 3.0 - 5.0 V Vos = Vas, ID = 150PA
AVSS(th) Gate Threshold Voltage Coefficient - -12 - mV/°C
loss Drain-to-Source Leakage Current - - 20 A I/os = 150V, Vas = 0V
- - 250 p Vos = 150V, Vas = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 38 - - S Vos = 50V, ID = 34A
q, Total Gate Charge - 36 54
0981 Pre-Vth Gate-to-Source Charge - 13 - Vos = 75V
Qgsg Post-Vth Gate-to-Source Charge - 4.6 - Vas = 10V
di Gate-to-Drain Charge - 11 - nC ID = 34A
ngdr Gate Charge Overdrive - 7.4 -
st Switch Charge (0982 + di) - 15.6 -
Qoss Output Charge - 14 - nC Vos = 16V, I/ss = 0V
RG Gate Resistance - 1.7 - Q
td(on) Turn-On Delay Time - 9.4 - VDD = 75V, I/ss = 10V
t, Rise Time - 9.7 - ID = 34A
trom Turn-Off Delay Time - 14 - ns Re=1.3Q
t, Fall Time - 3.4 -
Ciss Input Capacitance - 2300 - Vas = 0V
COss Output Capacitance - 205 - pF VDS = 50V
Crss Reverse Transfer Capacitance - 47 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 230 mJ
|AR Avalanche Current OD - 34 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 56 MOSFET symbol D
(Body Diode) showing the
G, Pulsed Source Current - - 220 integral reverse G
(Body Diode) C) p-n junction diode. s
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 34A, Vas = 0V Cl)
trr Reverse Recovery Time - 52 78 ns T J = 25°C, IF = 34A, Va, = 75V
Q,, Reverse Recovery Charge - 550 825 nC di/dt = 500/Vps (3)
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
Remmb Junction-to-Mounting Base 0.5 0.8
Rsuc (Top) Junction-to-Case co - 15 °CNV
ReJA Junction-to-Ambient (9 - 35
Ram (<10s) Junction-to-Ambient © - 22
lil © 2013 International Rectifier September 6, 2013
