IRFH5306TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures BenefitsLow charge (typical 7.8nC) Lower switching lossesLow thermal resistance to PCB (< ..
IRFH7911 ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free packageFeaturesIncreased power densityControl and synchronous FET in one package(50% vs two PQFN 5x6) Low ..
IRFH7911TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package HEXFET Power MOSFET
IRFH5306TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
Tait Rectifier
|RFH5306PbF
HEXFET© Power MOSFET
VDs 30 V
RDS(on) max 8.1 m9
(ON/as = 10V)
09 (typical) 7.8 nC
Rs (typical) 1 .4
(@Tc(Bottom) = 25°C)
POFN 5X6 mm
Applications
q Control MOSFET for buck converters
Features and Benefits
Features Benefits
Low charge (typical 7.8nC) Lower switching losses
Low thermal resistance to PCB (< 4.9°C/W) Increased power density
100% Rg tested Increased reliability
Low profile (< 0.9 mm) results in Increased power density
Industry-standard pinout =r Multi-vendor compatibility
Compatible with existing Surface Mount Techniques Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
MSL1, Industrial qualification Increased reliability
Orderable part number Package Type Standard Pack Note
Form Quantity
IRFH5306TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFHg306TR2PBF PQFNémm+6mm TApe-and-Reel 400 EOL notice #259
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 15
lo @ TA = 70°C Continuous Drain Current, Vss @ 10V 13
ID @ quonm) = 25°C Continuous Drain Current, Vss @ 10V 44 A
ID @ Tam“) = 100°C Continuous Drain Current, Vos @ 10V 28
G, Pulsed Drain Current C) 60
PD @TA = 25°C Power Dissipation G) 3.6 W
PD @ Tomonom) = 25°C Power Dissipation co 26
Linear Derating Factor s 0.029 W/°C
T, Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Notes OD through s are on page 8
fl © 2014 International Rectifier Submit Datasheet Feedback January 20, 2014
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Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABN/ross/NL Breakdown Voltage Temp. Coefficient - 0.02 - VPC Reference to 25°C, ID =1mA
Roam) Static Drain-to-Source On-Resistance - 6.9 8.1 mQ Vss = 10V, b = 15A ©
- 11 13.3 VGs=4.5V,ln=15A ©
VGth, Gate Threshold Voltage 1.35 1.8 2.35 V
. VDs = I/ss, ID = 25pA
AVGSm, Gate Threshold Voltage Coefhcient - -6.4 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 pA Vos = 24V, VGS = 0V
- - 150 VDS = 24V, Ves = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 35 - - S VDS = 15V, ID = 15A
a, Total Gate Charge - 7.8 12
Ail Pre-Vth Gate-to-Source Charge - 1.8 - Vos = 15V
QM Post-Vth Gate-to-Source Charge - 1 .1 - nC Vss = 4.5V
qu Gate-to-Drain Charge - 3.0 - ID =15A
090d, Gate Charge Overdrive - 1.9 - See Fig.17 & 18
st Switch Charge (Qq§2 + qu) - 4.1 -
ass Output Charge - 4.9 - nC Vos = 16V, Vas = 0V
FIG Gate Resistance - 1.4 - Q
tsom Turn-On Delay Time - 9.0 - VDD = 15V, Vss = 4.5V
t, Rise Time - 26 - ns ID =15A
tumm Turn-Off Delay Time - 9.1 - RG=1.8Q
t, Fall Time - 6.1 - See Fig.15
Ciss Input Capacitance - 1125 - Vss = 0V
Coss Output Capacitance - 230 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 102 - f = 1 .OMHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy © - 46 mJ
|AR Avalanche Current co - 15 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, Is =16A,Vss = 0V ©
trr Reverse Recovery Time - 17 26 ns Tu = 25°C, IF =15A,VDD = 15V
a,, Reverse Recovery Charge - 18 27 nC di/dt = 2OOA/ps (3
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
Rm (Bottom) Junction-to-Case Ci) - 4.9
Ros: (Top) Junction-to-Case co - 24 'C/W
Ras Junction-to-Ambient s - 35
RM(<1OS) Junction-to-Ambient s - 22
© 2014 International Rectifier Submit Datasheet Feedback January 20, 2014
