IRFI3205 ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
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IRFI3205
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.13748
IRFI3205
HEXFET® Power MOSFET
International
TOR, Rectifier
o Advanced Process Technology D
0 Ultra Low On-Resistance VDSS = 55V
o Isolated Package
o High Voltage Isolation = 2.5KVRMS s at R = O 0080
o Sink to Lead Creepage Dist. = 4.8mm G "n DS(on) .
o Fully Avalanche Rated I - 64A
Description s D
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications. 5'-ti'f:'i,'T.'iC...-r,
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalentto using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 64
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 45 A
IDM Pulsed Drain Current C)6) 390
PD @Tc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 W/°C
I/ss Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy©© 480 ml
IAR Avalanche Current0D© 59 A
EAR Repetitive Avalanche Energy© 6.3 mJ
dv/dt Peak Diode Recovery dv/dt @© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 2.4 °CNV
Ran Junction-to-Ambient - 65 °CNV
8/25/97
IRFl3205 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.008 f2 VGs = 10V, ID = 34A co
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 42 - - S VDs = 25V, ID = 59A©
loss Drain-to-Source Leakage Current - - 25 PA VDS = 55V, VGS = 0V
- - 250 VDS = 44V, Ves = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 170 ID = 59A
Qgs Gate-to-Source Charge - - 32 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 74 VGS = 10V, See Fig. 6 and 13 C4)6D
td(on) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 100 - ns ID = 59A
tam) Turn-Off Delay Time - 43 - R9 = 2.59
tr Fall Time - 70 - RD = 0399, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 4000 - VGs = 0V
Coss Output Capacitance - 1300 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 480 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the I-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) C)6) - - 390 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 34A, VGS = 0V ©
tn Reverse Recovery Time - 110 170 ns To = 25°C, IF = 59A
Qrr Reverse RecoveryCharge - 450 680 pC di/dt = 100A/ps COO)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by G) Pulse width I 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 190pH s t=60s, f=60Hz
Re: 250, IAS-- 59A. (See Figure 12)
© '30 f 59A, di/dt g 290A/ps, VDD g V(BR)DSS: © Uses IRF3205 data and test conditions
T J 3 175°C
